Electronic properties of amorphous zinc tin oxide films by junction capacitance methods

Erslev, Peter T.; Chiang, Hai Q.; Hong, Dezhi; Wager, John F.; Cohen, J. David

doi:10.1016/j.jnoncrysol.2007.09.062

Cited by 15 publications

(6 citation statements)

References 8 publications

(10 reference statements)

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“…Thus, the optical absorption spectrum will still show band tailing, as in conventional amorphous semiconductors, as this is due to the valence band edge. This is indeed found by Erslev et al [36].…”

Section: Density Of Statessupporting

confidence: 81%

Disorder and instability processes in amorphous conducting oxides

Robertson

2008

Physica Status Solidi (b)

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The behaviour of ionic amorphous oxide semiconductors (transparent conducting oxides) such as In2O3, SnO2, and ZnO is contrasted with that of covalent amorphous semiconductors such as amorphous Si. These oxides have an s‐like conduction band minima, which leads to high electron mobilities, smaller effects of disorder, and the ability to move the Fermi level well into the conduction band. This results in an absence of the bias stress instability due to the bond breaking mechanism in oxide thin film transistors, which limited the stability of a‐Si:H transistors. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Density Of Statessupporting

confidence: 81%

Disorder and instability processes in amorphous conducting oxides

Robertson

2008

Physica Status Solidi (b)

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“…To date, electron transport in a‐IGZO has been investigated by Hall measurements and a percolation conduction model 14–16. The subgap states have been probed by device simulations 17, 18, capacitance–voltage ( C – V ) analyses 18–20 and hard X‐ray photoemission (HX‐PES) measurements 21. First‐principles calculations based on the density‐functional theory (DFT) have been reported for crystalline IGZO (c‐IGZO) 22–25 and a‐IGZO 26–28, which provides the atomic and electronic structure models for stoichiometric a‐IGZO 26 and oxygen‐deficient c‐/a‐IGZO 25, 27, 28.…”

Section: Introductionmentioning

confidence: 99%

Subgap states, doping and defect formation energies in amorphous oxide semiconductor a‐InGaZnO₄ studied by density functional theory

Kamiya

Nomura

Hosono

2010

Physica Status Solidi (a)

155

135

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Amorphous In-Ga-Zn-O (a-IGZO) is expected for channel layers in thin-film transistors (TFTs). It is known that a-IGZO is sensitive to an O/H-containing atmosphere; therefore, it is important to clarify the roles of oxygen and hydrogen in a-IGZO. This paper provides atomic and electronic structures, formation energies of defects and bond energies in a-IGZO calculated by first-principles density functional theory (DFT). It was confirmed that oxygen deficiencies having small formation energies (2-3.6 eV) form either deep fully-occupied localized states near the valence band maximum or donor states, which depend on their local structures. All the hydrogen doping form -OH bond and work as a donor. The stable -OH bonds have small formation energy of $0.45 eV and consist of three metal cations coordinated to the O ion. The bond energy of Ga-O is calculated to be $2.0 eV, which is the largest among the chemical bonds in a-IGZO (1.7 eV for In-O and 1.5 eV for ZnO). This result supports the idea that the incorporation of Ga stabilizes a-IGZO TFTs.

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“…ZnO-SnO 2 films, which have the advantages of ZnO as well as SnO 2 , have been suggested as a promising material for transparent electronic devices [8,9]. Hitherto, most studies on ZnO-SnO 2 films were focused on highly conductive ZnO-SnO 2 films.…”

Section: Introductionmentioning

confidence: 99%

“…However, the study on highresistive transparent films is also necessary for passive devices such as resistors as well as TTFT, which realizes transparent integrated circuits. Conventionally, ZnO-SnO 2 films have been grown by rf magnetron sputtering and have been reported as being zinc-stannate intermediate compounds composed of Zn 2 SnO 4 and ZnSnO 3 phases [8,9].…”

Section: Introductionmentioning

confidence: 99%

Highly transparent and resistive nanocrystalline ZnO-SnO₂films prepared by rf magnetron sputtering

Cha¹,

Choi²,

Ma³

2012

Journal of Electrical Engineering and Technology

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-ZnO-SnO 2 films were deposited by rf magnetron sputtering using a ZnO-SnO 2 (2:1 molar ratio) target. The target was made from a mixture of ZnO and SnO 2 powders calcined at 800°C. The working pressure was 1 mTorr, and the rf power was 120 W. The ratio of oxygen to argon (O 2 :Ar) was varied from 0% to 10%, and the substrate temperature was varied from 27°C to 300°C. The crystallographic properties and the surface morphologies of the films were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force spectroscopy (AFM). The ZnO-SnO 2 films deposited in O 2 :Ar = 10% exhibited resistivity higher than 10 6 Ωcm and transmittance of more than 80% in the visible range.

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Electronic properties of amorphous zinc tin oxide films by junction capacitance methods

Cited by 15 publications

References 8 publications

Disorder and instability processes in amorphous conducting oxides

Disorder and instability processes in amorphous conducting oxides

Subgap states, doping and defect formation energies in amorphous oxide semiconductor a‐InGaZnO₄ studied by density functional theory

Highly transparent and resistive nanocrystalline ZnO-SnO₂films prepared by rf magnetron sputtering

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Electronic properties of amorphous zinc tin oxide films by junction capacitance methods

Cited by 15 publications

References 8 publications

Disorder and instability processes in amorphous conducting oxides

Disorder and instability processes in amorphous conducting oxides

Subgap states, doping and defect formation energies in amorphous oxide semiconductor a‐InGaZnO4 studied by density functional theory

Highly transparent and resistive nanocrystalline ZnO-SnO2films prepared by rf magnetron sputtering

Contact Info

Product

Resources

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Subgap states, doping and defect formation energies in amorphous oxide semiconductor a‐InGaZnO₄ studied by density functional theory

Highly transparent and resistive nanocrystalline ZnO-SnO₂films prepared by rf magnetron sputtering