-ZnO-SnO 2 films were deposited by rf magnetron sputtering using a ZnO-SnO 2 (2:1 molar ratio) target. The target was made from a mixture of ZnO and SnO 2 powders calcined at 800°C. The working pressure was 1 mTorr, and the rf power was 120 W. The ratio of oxygen to argon (O 2 :Ar) was varied from 0% to 10%, and the substrate temperature was varied from 27°C to 300°C. The crystallographic properties and the surface morphologies of the films were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force spectroscopy (AFM). The ZnO-SnO 2 films deposited in O 2 :Ar = 10% exhibited resistivity higher than 10 6 Ωcm and transmittance of more than 80% in the visible range.
ZnO with hexagonal wurzite structure is a wide band gap n-type semiconductor. ZnO films can be prepared to obtain high transparency in the visible range, low resistivity, chemical stability and stability in hydrogen plasma including many foreign materials such as Al, In. In this work, we prepared ZnO:Al thin film by Facing Targets Sputtering system with Zn metal target and ZnO:Al(Al2O3 2wt%, 4wt%) ceramic target at total working gas pressure 1mTorr, substrate temperature R.T.. We evaluated the crystallographic, electrical and optical characteristics of the ZnO:Al films.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.