Electronic localization in momentum space during charge density wave phase transitions in 1T-TaS2

Boehme, M.; Kipp, L.; Skibowski, M.

doi:10.1016/s0038-1098(99)00250-1

Cited by 4 publications

(1 citation statement)

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“…The k dispersion parallel to the layers, however, is preserved. The energy gap in the insulating state amounts to roughly 0.4 eV in the occupied part, which is more than one order of magnitude larger than the gap observed in the commensurate phase of clean 1T-TaS 2 below 180 K. 3,13 More drastically, it appears that the highest-energy p-orbitalderived structure ͑about 1.5 eV below the Fermi level͒ vanishes completely ͑see dashed line͒. Such behavior which is also observed in intercalation studies 22 is due to a decreasing overlap of p orbitals when the layer separation is increased.…”

Section: B Electronic Structurementioning

confidence: 86%

Reconfiguration of charge density waves by surface nanostructures onTaS2

et al. 2001

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The transition metal dichalcogenide 1T-TaS 2 forms charge density waves due to the quasi-twodimensionality of its electronic structure. Here we show how the growth of Rb nanowires on the surface of 1T-TaS 2 affects the superstructure of the charge density waves. Scanning tunneling microscopy and lowenergy electron diffraction studies show the replacement of the normal TaS 2 room temperature ͱ13ϫͱ13 phase by c(2ͱ3ϫ4)rect. and 3ϫ3 superstructures depending on the state of nanowire growth. Furthermore, angle resolved photoemission studies give evidence for a metal to semiconductor transition when the superstructure of the charge density wave is changed. These changes are discussed in the context of nanowire growth, which is accompanied by a change in the dimensionality of the electronic states of 1T-TaS 2 .

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Section: B Electronic Structurementioning

confidence: 86%