Electronic Conduction in Oxides

Tsuda, Nobuo; Nasu, Keiichirō; Fujimori, A.; Siratori, Kiiti

doi:10.1007/978-3-662-04011-9

Cited by 262 publications

(172 citation statements)

References 763 publications

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“…1,2 Among them manganese perovskites occupy a prominent place due to their very peculiar properties, such as the colossal magnetoresistive response and the half metallic character. Nevertheless, the successful implementation of oxide-based devices requires preserving bulklike magnetic and transport properties at surfaces and interfaces.…”

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confidence: 99%

Transport properties across the La2∕3Ca1∕3MnO3∕SrTiO3 heterointerface

Balcells

Abad

Rojas

et al. 2008

Journal of Applied Physics

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The transport properties across La 2/3 Ca 1/3 MnO 3 / SrTiO 3 ͑LCMO/STO͒ heterostructures with different thicknesses of the STO insulating barrier have been studied by using atomic force microscopy measurements in the current sensing ͑CS͒ mode. To avoid intrinsic problems of the CS method we have developed a nanostructured contact geometry of Au dots. The conduction process across the LCMO/STO interface exhibits the typical features of a tunneling process. The analysis of I͑V͒ curves by using the Simmons model allows us to determine the barrier height ͑ 0 Ϸ 0.6 eV͒ of STO barriers. © 2008 American Institute of Physics. ͓DOI: 10.1063/1.2833760͔Complex oxides have attracted much interest recently because they show a broad spectrum of intrinsic functionalities that allow envisaging the development of a new generation of oxide-based electronic, magnetic, and magnetoresistive devices. 1,2 Among them manganese perovskites occupy a prominent place due to their very peculiar properties, such as the colossal magnetoresistive response and the half metallic character. Nevertheless, the successful implementation of oxide-based devices requires preserving bulklike magnetic and transport properties at surfaces and interfaces. Thus, the physics and chemistry of surfaces and interfaces become a subject of primary interest since they can drastically modify magnetic and electronic properties reducing the performances of thin films and multilayered structures due to chemical inhomogeneity, strain, charge transfer, or spin exchange interactions. 3,4 Interfacial effects are especially relevant in manganitebased magnetic tunneling junctions where not only electronic but also magnetic properties are important. Due to the strong orbital-lattice coupling lattice strain effects may be very important in manganites 5 thus, playing a relevant role on the degradation of the magnetic properties. 6 However, other causes, such as polar discontinuity across the interface, may also be important. 7 In this sense, recent theoretical studies predict the appearance of electronic phase segregation with the formation of a spin-and orbital-ordered insulator phase at the manganite-insulator interface due to the reduction of carriers at the interface. 8 In this work we have carefully analyzed the transport properties across SrTiO 3 ͑STO͒ insulating barriers on top of La 2/3 Ca 1/3 MnO 3 ͑LCMO͒ films at room temperature by using atomic force microscopy ͑AFM͒ working in the current sensing ͑CS͒ mode. To avoid intrinsic problems of the CS method we have developed a nanostructured contact geometry of Au dots. The conduction process across the LCMO/ STO/Au heterostructure exhibits the typical features of a tunneling process. The analysis of I͑V͒ curves by using the Simmons model allows us to determine the barrier height, 0 Ϸ 0.6 eV, in good agreement with previous reports for STO tunneling barriers.LCMO epitaxial thin films of about 60 nm thick have been grown by rf sputtering on top of ͑001͒ STO substrates ͓T D = 800°C and a pressure of 330 mTorr ͑Ar+ 20% O 2...

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confidence: 99%

Transport properties across the La2∕3Ca1∕3MnO3∕SrTiO3 heterointerface

Balcells

Abad

Rojas

et al. 2008

Journal of Applied Physics

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“…1 The material has a cubic spinel structure based on an oxygen fcc sublattice, where, in the case of a regular spinel, divalent cations are situated on tetrahedral and trivalent cations on octahedral lattice interstices. NiMn 2 O 4+␦ is not a regular but intermediate type of spinel where a fraction x of Ni 2+ cations are displaced from tetrahedral to octahedral interstices.…”

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Small polaron hopping in spinel manganates

2005

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“…All films with ρ<10 -3 Ω.cm are non-activated, as expected for degenerated oxide semiconductors [3]. For highly resistive films (ρ>10 10 Ω.cm), we could not determine the activation energy through the conductivity measurements, while for the so-called active oxide semiconductors (either polycrystalline or amorphous) this was accomplished, as shown for example in fig.…”

Section: Materials Propertiesmentioning

confidence: 91%

“…Concerning p-type oxide semiconductors, this activity has been also pursued in the last years [37][38][39][40][41][42][43][44][45]. Recently, a p-type TFT based on low band gap SnO has been reported [46], in spite of the difficulty in having metals with a high work function, that are able to perform the required ohmic contact with the p-type oxide with a low carrier concentration (below 10 16 carriers/cm 3 ) [3,47].…”

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confidence: 99%