Electronic and Optoelectronic Nanodevices Based on Two-Dimensional Semiconductor Materials

Abstract

With the continuous miniaturization and integration of electronic and optoelectronic nanodevices, Moore's Law faces huge challenges from the demands of devices with multifunctional and high-performance characteristics. With several recent reports of the successful synthesis of nanomaterials such as nanoparticles, quantum dots, nanowires, and twodimensional layered materials, the utilization of such materials for the fabrication of electronic and optoelectronic nanodevices has demonstrated potential for realizing multifunctional and high-performance nanodevices in the future. In particular, owing to their excellent electrical, thermal, mechanical, and optical properties, atomically two-dimensional layered materials have emerged as the most promising materials for nanodevices to solve the bottleneck problems of traditional silicon-based devices. Two-dimensional semiconductor materials have been widely applied in many aspects of functional modules, including pn junctions, field effect transistors, rectifiers, photodetectors, and even solar cells. To provide a strong foundation for the development of high-performance and multifunctional nanodevices in the future, this review summarizes the recent advances in electronic and optoelectronic nanodevices based on novel two-dimensional semiconductor materials. We begin the review with a brief introduction of existing two-dimensional materials, including graphene, transition-metal dichalcogenide materials, black phosphorus, hexagonal boron nitride, and van der Waals heterostructures. The atom structure features, electronic and optical properties, and major applications in devices are discussed. The semiconductor materials are suitable for device channels, while graphene and hexagonal boron nitride can be used as electrodes, encapsulating materials, and components of van der Waals heterostructures for channel of field effect transistors. Next, we mainly discuss the advances in electronic and optoelectronic nanodevices based on transition-metal dichalcogenide materials, black phosphorus, and van der Waals heterostructures. In the context of electronic nanodevices, we introduce field effect transistors and other important functional devices, such as sensors, memristors, and integrated circuits. The mobility, on-off ratio, rectification ratio, and other properties of electronic devices are mentioned. In addition, we describe the potential applications of optoelectronic nanodevices for photodetectors, lasers, light-emitting diodes, photovoltaic devices, and so on. The metrics of devices performance such as responsivity, response time, and spectrum response range are compared. Finally, we summarize and compare the advantages and disadvantages of nanodevices based on different materials. Manufacturing comprehensive and high-performance nanodevices will be a promising direction in the future. In addition, the methods for improving the performance of devices are classified. This review will serve as an important reference for the development of future multifunctional and high-perfor...

Tunable Electronic Properties of Few-Layer Tellurene under In-Plane and Out-of-Plane Uniaxial Strain

“…Since a variety of two-dimensional (2D) materials have been synthesized by mechanical exfoliation, chemical vapor deposition (CVD), physical vapor deposition (PVD), molecular beam epitaxy (MBE), pulsed laser deposition (PLD), and so on [ 1 , 2 ], the mechanical, electrical, optical, and quantum properties make them attractive for applications in transistors, photodetectors, cells, sensors, and memristors [ 3 , 4 , 5 , 6 ]. However, despite the promising superiority of 2D materials, their intrinsic properties make them unsuitable for fabricating nano-devices with excellent properties and stability.…”

The progress of fabricating the 2D materials and heterostructure devices

“…Integrated circuits use semiconductor manufacturing process, on a small piece of single crystal silicon to make many transistors, resistors, capacitors and other components. The channel thickness of traditional silicon-based Field effect transistor (FET) must be less than one third of the channel length in order to avoid short channel effect, and the channel process of traditional transistor is approaching the theoretical limit [22,23]. Two-dimensional semiconductor materials, as the thinnest state-of-art semiconductor materials, can relatively pass smoothly because charge on its smooth surface is not affected by surface states and other factors.…”

“…Common optoelectronic devices contain LED, photosensitive resistance, etc. Compared with the optoelectronic devices constructed by a single lowdimensional semiconductor material, the optoelectronic devices constructed by low-dimensional heterostructure have unique electron transport performance and optoelectronic characteristics [23]. When two semiconductor nanomaterials with different work functions contact to form a heterojunction, the different Fermi levels will lead to the redistribution of carriers in the heterojunction, resulting in many novel physical properties.…”

Direct Laser Irradiation and Modification of 2D Te for Development of Volatile Memristor

“…It is notable that 2D materials, such as graphene, black phosphorene(BP), transition metal dichalcogenides (TMDs), and hexagonal boron nitride (h-BN), have aroused intensive attention as promising candidates for next-generation transistors, photodetectors, sensors, memristors, etc. [ 1 , 2 , 3 , 4 ]. With achievements of synthesizing large-scale and high-quality 2D materials by mechanical exfoliation, chemical vapor deposition (CVD), physical vapor deposition (PVD), and molecular beam epitaxy (MBE) [ 5 ], wafer-scale functional devices and circuits were fabricated and exhibited promising properties [ 6 , 7 ].…”