Electron spin as fingerprint for charge generation and transport in doped organic semiconductors

Privitera, Alberto; Londi, Giacomo; Kaienburg, Pascal; Liu, Junjie; Sperlich, Andreas; Lauritzen, Andreas E.; Thimm, Oliver; Ardavan, Arzhang; Beljonne, David; Riede, Moritz K.

doi:10.1039/d0tc06097f

Cited by 20 publications

(28 citation statements)

References 51 publications

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“…This is possibly due to the existence of the cation species in N-DMBI-doped samples, as reported in literature. [36][37][38] Next, we employed OFET as the platform to evaluate the effect of doping on the electrical properties of the semiconductor. TGBC devices with doped semiconductors as active layers were fabricated.…”

Section: P-/n-doping Of Pbbt-4t-2f At Low Doping Levels and Ofet Char...mentioning

confidence: 99%

Selective doping of a single ambipolar organic semiconductor to obtain P- and N-type semiconductors

Chen

Zhao

Chen

et al. 2022

Matter

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Section: P-/n-doping Of Pbbt-4t-2f At Low Doping Levels and Ofet Char...mentioning

confidence: 99%

Selective doping of a single ambipolar organic semiconductor to obtain P- and N-type semiconductors

Chen

Zhao

Chen

et al. 2022

Matter

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“…In addition, the off-diagonal peak associated with the aromatic groups of P4 appear at 5.4 and 5.9 ppm on the SQ axis (DQ, 11. Information on the hyperfine structure and local chemical environments of dopants in organic semiconductors can be obtained by EPR spectroscopy, [67][68][69] which has a single-site resolution to investigate paramagnetic species. Figure 3 compares the X-band continuous-wave length (CW) EPR and pulsed EPR HYperfine Sublevel COrRElation (HYSCORE) spectra of P4, P4:BCF and P4:F4TCNQ blends.…”

Section: Resultsmentioning

confidence: 99%

“…Information on the hyperfine structure and local chemical environments of dopants in organic semiconductors can be obtained by EPR spectroscopy, [67][68][69] which has a single-site resolution to investigate paramagnetic species. Fig.…”

Section: Resultsmentioning

confidence: 99%

Structural insights into Lewis acid- and F4TCNQ-doped conjugated polymers by solid-state magnetic resonance spectroscopy

et al. 2022

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“…[ 45 ] For this reason, while in inorganic semiconductors the charge carriers can be delocalized along the entire crystal and be mathematically described by Bloch wavefunctions, for most OSCs (at least those with low or moderate mobilities), charge carriers are often described as “polarons” and are localized, strongly coupled with molecular vibrational modes and sluggishly moving by thermally assisted hopping. [ 46–48 ] The strong localization of electronic states in OSCs has hindered the simultaneous control over both the energy levels and Fermi level for years. Recent studies, however, demonstrated that this can be obtain by taking advantage of molecular quadrupole moments, thereby paving the way to the possibility of band structure engineering in OSCs.…”

Section: Organic Semiconductorsmentioning

confidence: 99%

Perspectives of Organic and Perovskite‐Based Spintronics

Privitera

Righetto

Cacialli

et al. 2021

Advanced Optical Materials

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electronic devices-which are nearly at their physical limits. [3] In addition, taking advantage of spin interactions in optoelectronic devices will enable the improvement of their efficiency and/or stability (e.g., organic solar cells and organic lightemitting diodes (OLEDs)) and the development of new spin-based multifunctional devices (e.g., spin OLEDs, multifunctional organic spin-valve devices). [4,5,6,7] A crucial milestone in the development of spintronics was the discovery of the giant magnetoresistance (GMR) effect in 1988. [8] Through the giant magnetoresistance mechanism, the operating principles of, e.g., magnetic disk drives, i.e., the collective magnetization of localized spins in ferromagnetic layers, have been replaced by the electronic conduction depending on the electron spin state, which gave rise to new devices, like magnetic random access memories (MRAMs). [9] Since this discovery, spin properties of electronic materials have been the focus of extensive research to rationalize, e.g., the spin relaxation and spin transport mechanisms in metals and in semiconductors. This increased interest has favored an unprecedented transition from basic research to industrial commercialization. As a result, the first GMR device as a magnetic field sensor was commercialized in 1994; [10] and read heads for magnetic hard disk drives were announced in 1997 by International Business Machines Corporation (IBM). [11] By delving deeper into the fundamental physics underlying spintronic devices, Stuart Parkin spurred the development of this field and ushered spintronic commercial applications. For instance, hard disk drives featuring a read head based on Parkin's discoveries dominated the market for two decades. Currently, GMRbased read heads have been replaced by something called giant tunneling magnetoresistance devices, which exploit a spintronic phenomenon where electrons tunnel through a thin insulator. [12] The swift evolution of the spintronic field has been buoyed by new emerging phenomena that hold great promise for the future of nonvolatile magnetic memories, e.g., skyrmions and chiral spin torque, which is at the basis of racetrack memories. [13,14] Despite this great success, several open issues in the field of spintronics are yet to be addressed, for example, the successful spin injection into multilayer devices and the optimization of spin lifetimes in these structures, the transport of spin-polarized carriers across relevant length scales and heterointerfaces, the detection of spin coherence in nanoscale structures, and the manipulation of both electron and nuclear spins on sufficiently fast time scales. [15] The success of the research efforts can be guaranteed only by a thorough understanding of the fundamental spin interactions in solid-state materials as well as the role Spin-related phenomena in optoelectronic materials can revolutionize several technological applications in the areas of data processing and storage, quantum computing, lighting, energy harvesting, sensing, and healthcare. A fundam...

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Electron spin as fingerprint for charge generation and transport in doped organic semiconductors

Abstract: We use the electron spin as a probe to gain insight into the mechanism of molecular doping in a p-doped zinc phthalocyanine host across a broad range of temperatures (80–280 K) and doping concentrations (0–5 wt% of F6-TCNNQ).

Cited by 20 publications

References 51 publications

Selective doping of a single ambipolar organic semiconductor to obtain P- and N-type semiconductors

Selective doping of a single ambipolar organic semiconductor to obtain P- and N-type semiconductors

Structural insights into Lewis acid- and F4TCNQ-doped conjugated polymers by solid-state magnetic resonance spectroscopy

Perspectives of Organic and Perovskite‐Based Spintronics

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