Electron scattering interaction with coupled plasmon-polar-phonon modes in degenerate semiconductors

Kim, M. E.; Das, Aniruddha; Senturia, S.D.

doi:10.1103/physrevb.18.6890

Cited by 151 publications

(48 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Therefore, as in Ref. [8], it is necessary to define the phonon content [35] of each IPP mode. The phonon content quantifies the modal fraction that is phonon-like and modulates its scattering strength.…”

Section: B Plasmon and Phonon Contentmentioning

confidence: 99%

Theory of interfacial plasmon-phonon scattering in supported graphene

Ong

Fischetti

2012

Phys. Rev. B

View full text Add to dashboard Cite

One of the factors limiting electron mobility in supported graphene is remote phonon scattering.We formulate the theory of the coupling between graphene plasmon and substrate surface polar phonon (SPP) modes, and find that it leads to the formation of interfacial plasmon-phonon (IPP) modes, from which the phenomena of dynamic anti-screening and screening of remote phonons emerge. The remote phonon-limited mobilities for SiO 2 , HfO 2 , h-BN and Al 2 O 3 substrates are computed using our theory. We find that h-BN yields the highest peak mobility, but in the practically useful high-density range the mobility in HfO 2 -supported graphene is high, despite the fact that HfO 2 is a high-κ dielectric with low-frequency modes. Our theory predicts that the strong temperature dependence of the total mobility effectively vanishes at very high carrier concentrations.The effects of polycrystallinity on IPP scattering are also discussed.

show abstract

Section: B Plasmon and Phonon Contentmentioning

confidence: 99%

Theory of interfacial plasmon-phonon scattering in supported graphene

Ong

Fischetti

2012

Phys. Rev. B

View full text Add to dashboard Cite

show abstract

“…[1]). It was also known that in heavily doped materials electron plasma modifies dynamic properties of the crystalline lattice leading to the renormalization of the longitudinal optical phonon oscillations [2]. The effect of dynamical screening of electron-impurity interaction by phonons has been analyzed in Ref.…”

mentioning

confidence: 99%

Plasma Edge Modification in Strongly Compensated Semiconductors

et al. 1995

View full text Add to dashboard Cite

We demonstrate that the electron-impurity interaction can modify the reflectivity in the vicinity of plasma minimum giving rise to a small dip oii the plasma edge. Experimental spectra taken for Ηgι-x C ox S e for x < 0.02 at various temperatures confirm this theoretical prediction. The position of the structure can be used to determine the plasma frequency in highly compensated materials at low temperatures.PACS numbers: 71.45. Gm, 78.30.Fs, 72.30.+q The infrared absorption coefficient is most often described in terms of the simple Dude-Zener theory assuming frequency independent damping constants of free-carrier plasma and phonon excitations. Such approximation can be used to interpret the experimental data taken for lightly doped or uncompensated materials. However, in heavily doped and/or highly compensated semiconduction some deviations from such "classical" picture can be expected due to the increasing role of the collective plasma (plasmon) excitations in the process of the free-carrier absorption. Plasmon generation in the process of photon absorption by free-electron gas in semiconduction is possible only if ionized impurities or other imperfections breaking the translational invariance are present in the system. Resonant behaviour of the free-carrier loss function above the plasma frequency leads to the enhancement of the damping parameter in the ac conductivity.A lot of studies have been devoted to the role of collective excitations in the free-carrier absorption. They were primarily related to the question of plasmon excitation in the process of electron-impurity scattering (for the references see,

show abstract

“…Here we do not deal with optical properties so we neglect the band gap renormalization since it does not drastically affect the effective masses. At high carrier density, when the plasmon energy is close to the POP energy the coupling of those two excitation systems gives rise to mixed modes (LOPCM) [10]. This effect is accounted for by calculating the total dielectric function (free carriers + lattice) as follows…”

Section: Theorymentioning

confidence: 99%

Minoritary Transport in Heavily Doped p-type InGaAs

Tea

Aniel

2009

MRS Proc.

View full text Add to dashboard Cite

Minoritary carrier's transport properties are of fundamental importance for the HBT's physics. The base transit time is a key parameter to improve microwave figure of merit. Some recent minoritary electron mobilities measurements versus acceptor doping level measured using magneto transport method exhibit a dramatic increase at very high majority carrier concentration. This effect has been attributed to the coupling of polar optical phonons with hole plasmons (LOPC) which controls the balance between enegy gain by electric field acceleration and energy loss by polar optical phonon emission. We present minoritary mobilities as a function of majority carrier doping calculated in the frame of electrons and holes Monte Carlo modelling including LOPC.

show abstract

Electron scattering interaction with coupled plasmon-polar-phonon modes in degenerate semiconductors

Cited by 151 publications

References 26 publications

Theory of interfacial plasmon-phonon scattering in supported graphene

Theory of interfacial plasmon-phonon scattering in supported graphene

Plasma Edge Modification in Strongly Compensated Semiconductors

Minoritary Transport in Heavily Doped p-type InGaAs

Contact Info

Product

Resources

About