Minoritary Transport in Heavily Doped p-type InGaAs

Abstract

Minoritary carrier's transport properties are of fundamental importance for the HBT's physics. The base transit time is a key parameter to improve microwave figure of merit. Some recent minoritary electron mobilities measurements versus acceptor doping level measured using magneto transport method exhibit a dramatic increase at very high majority carrier concentration. This effect has been attributed to the coupling of polar optical phonons with hole plasmons (LOPC) which controls the balance between enegy gain by electric field acceleration and energy loss by polar optical phonon emission. We present minoritary mobilities as a function of majority carrier doping calculated in the frame of electrons and holes Monte Carlo modelling including LOPC.