Electron Radiation Damage in Cadmium-Selenide Crystals at Liquid-Helium Temperature

Schulz, Hans‐Joachim; Kulp, B. A.

doi:10.1103/physrev.159.603

Cited by 17 publications

(1 citation statement)

References 40 publications

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“…These simple defects introduce competitive, radiative or nonradiative, channels of recombination. From our earlier papers [5, 61 and the papers of Schulz and Kulp [7,81 it is known that electron irradiation below 77 K results in quenching of the EE intensity. The lack of new luminescence bands in the edge emission of CdSe immediately after lowtemperature bombardment [5 to 81 suggests that none of the above-mentioned defects has shallow states in the energy gap.…”

Section: Electron-irradiated C D S E Crystalsmentioning

confidence: 99%

Distant DAP bands in electron-irradiated and ion-implanted CdSe

Kozanecki

Rzewuski

1984

Phys. Stat. Sol. (a)

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The photoluminescence spectra of electron irradiated and ion implanted CdSe in the edge‐emission (EE) region are studied. In the case of CdSe: Cl bombarded with 1.5 MeV electrons followed by furnace annealing above 300 K a new 14155 cm−1 band (B2) appears which is interpreted as the formation of an acceptor‐like complex of the from VCdClSe stable below 470 K. The CdSe: P samples show an enhancement of the 13970 cm−1 band which does not show any relation to P‐ion doping. In Cl+‐implanted and laser annealed CdSe samples a new 14200 cm−1 band (DAP) is observed which disappears after additional furnace annealing at 470 K. It is suggested that a similar VCdClSe complex is responsible for the 14200 cm−1 band behaviour. In the case of P+‐ and Ar+‐implanted CdSe it is found that laser annealing reduces the EE intensity to an unmeasurable value.

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Section: Electron-irradiated C D S E Crystalsmentioning

confidence: 99%

Distant DAP bands in electron-irradiated and ion-implanted CdSe

Kozanecki

Rzewuski

1984

Phys. Stat. Sol. (a)

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The subthreshold radiation effects in semiconductors

Вавилов

Kiv

Niyazova

1975

Phys. Stat. Sol. (a)

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Extrinsic Photoconductivity of Fast‐Electron‐Irradiated Undoped CdS Single Crystals

Wruck

1970

Physica Status Solidi (b)

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The extrinsic photoconductivity of undoped platelet-type CdS crystals irradiated with 280 keV electrons was investigated a t liquid nitrogen and room temperatures in the photon energy range 0.1 to 2.5 eV, using polarized light in the range 0.6 to 2.5 eV. A sensitive ac method was used, superimposing a chopped measuring beam on a constant bias illumination level. At least six photoconductivity bands were found. The bands in the range 0.6 to 2.5 eV are weakly polarized, the higher intensity occurring for E 1 c. The fine structure of the low-energy quenching band previously observed by Hemila and Bube [28] was reproduced but was found to be caused by atmospheric absorption bands. Most of the bands in the photoconductivity spectrum correspond to absorption bands found by Boyn [8] in thick crystals. -The present results, assuming the threshold energies for atomic displacement in CdS determined by Kulp and Kelley [2,3] to be valid, together with the results of trap analysis made also in this work, absorption measurements [8], and our earlier investigations of the trap spectrum, electron lifetime, and dark conductivity of deuteronbombarded CdS crystals [27] suggest an assignment of the photoconductivity bands to intrinsic lattice defects and to donor-acceptor associates involving intrinsic defects and residual impurities.Die Storstellenphotoleitfahigkeit undotierter plattchenformiger CdS-Kristalle, die mit 280 keV-Elektronen bestrahlt worden waren, wurde bei der Temperatur des flussigen Stickstoffs und bei Raumtemperatur im Photonenenergiebereich von 0,l bis 2,5 eV untersucht, wobei im Bereich von 0,6 bis 2,5 eV mit polarisiertem Licht gearbeitet wurde. Zur Messung wurde eine empfindliche Wechsellichtmethode benutzt, bei der ein zerhackter Xe5strahl einem konstanten Gleichlicht uberlagert wurde. Mindestens sechs Photoleitfahigkeitsbanden wurden gefunden. Die Banden im Bereich von 0,6 bis 2,5 eV sind schwach polarisiert, die groBere Intensitat tritt fur E 1 e auf. Die Feinstruktur der niederener-

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Electron Radiation Damage in Cadmium-Selenide Crystals at Liquid-Helium Temperature

Cited by 17 publications

References 40 publications

Distant DAP bands in electron-irradiated and ion-implanted CdSe

Distant DAP bands in electron-irradiated and ion-implanted CdSe

The subthreshold radiation effects in semiconductors

Extrinsic Photoconductivity of Fast‐Electron‐Irradiated Undoped CdS Single Crystals

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