The subthreshold radiation effects in semiconductors

Вавилов, В.С.; Kiv, A.; Niyazova, O. R.

doi:10.1002/pssa.2210320102

Cited by 57 publications

(10 citation statements)

References 43 publications

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“…We have previously argued that this activation cannot be attributed to defect creation caused by barely kick-out of a Ga atom by an H ion from a substitutional to interstitial site, as the energy that can be transferred from a 100 eV H ion to a Ga atom in a direct collision is only 5.6 eV, i.e., below the threshold displacement energy of about 8.8 eV for Ga atoms. 34 Our present results further support this conclusion. Indeed, even though the same kick-out process is also expected to occur in GaNP independent of N composition, the Ga i -C defects were not formed after hydrogenation in GaNP with a low N content as can be seen from Fig.…”

Section: Ganp/gapsupporting

confidence: 88%

Effects of hydrogenation on non-radiative defects in GaNP and GaNAs alloys: An optically detected magnetic resonance study

Dagnelund

Vorona

Nosenko

et al. 2012

Journal of Applied Physics

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Photoluminescence and optically detected magnetic resonance techniques are utilized to study defect properties of GaNP and GaNAs alloys subjected to post-growth hydrogenation by low-energy sub-threshold ion beam irradiation. It is found that in GaNP H incorporation leads to activation of new defects, which has a Ga interstitial (Ga-i) atom at its core and may also involve a H atom as a partner. The observed activation critically depends on the presence of N in the alloy, as it does not occur in GaP with a low level of N doping. In sharp contrast, in GaNAs hydrogen is found to efficiently passivate Ga-i-related defects present in the as-grown material. A possible mechanism responsible for the observed difference in the H behavior in GaNP and GaNAs is discussed.funding agencies|Swedish Research Council| 621-2010-3815 |Swedish Institute|

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Section: Ganp/gapsupporting

confidence: 88%

Effects of hydrogenation on non-radiative defects in GaNP and GaNAs alloys: An optically detected magnetic resonance study

Dagnelund

Vorona

Nosenko

et al. 2012

Journal of Applied Physics

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“…21 This energy is below the threshold displacement energy of a Ga atom: ϳ8.8 eV. 22 However, considering the large amount of H implanted and possibility of subthreshold defect formation 23,24 direct introduction of Ga i defects by H bombardment could still occur. In order to FIG.…”

Section: Applied Physics Letters 98 141920 ͑2011͒mentioning

confidence: 99%

Effect of postgrowth hydrogen treatment on defects in GaNP

Dagnelund

Wang

et al. 2011

Applied Physics Letters

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Effect of postgrowth hydrogen treatment on defects and their role in carrier recombination in GaNP alloys is examined by photoluminescence (PL) and optically detected magnetic resonance. We present direct experimental evidence for effective activation of several defects by low-energy subthreshold hydrogen treatment (andlt;= 100 eV H ions). Among them, two defect complexes are identified to contain a Ga interstitial. Possible mechanisms for the H-induced defect activation and creation are discussed. Carrier recombination via these defects is shown to efficiently compete with the near band-edge PL, explaining the observed degraded optical quality of the alloys after the H treatment.Original Publication:Daniel Dagnelund, Xingjun Wang, C W Tu, A Polimeni, M Capizzi, Weimin Chen and Irina Buyanova, Effect of postgrowth hydrogen treatment on defects in GaNP, 2011, APPLIED PHYSICS LETTERS, (98), 14, 141920.http://dx.doi.org/10.1063/1.3576920Copyright: American Institute of Physicshttp://www.aip.org

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“…Influence of electrons with sub-threshold energies (E < E T ) on the processes of structural transformations in semiconductors has been studied in [8][9][10][11] where it was reported about possibility of formation of point defects (vacancies and interstitials) in these materials under such irradiation. The formation of structural defects under irradiation of ZnS crystals by electrons with energy E < E T in TEM previously discussed in [12].…”

Section: Introductionmentioning

confidence: 99%

Formation of dislocation loops and voids in electron irradiated zinc selenide single crystals

Loginov

Brown

Ковалев

2017

IOP Conf. Ser.: Mater. Sci. Eng.

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Abstract. The formation of small dislocation loops in size of 2.5 -45 nm and a density of 1.4•10 11 cm -2 , as well as voids in size ≤10 nm in ZnS crystals were found by the transmission electron microscopy method (TEM). Samples were examined and irradiated in situ in а JEOL 4000ЕХ-II electron microscope operated at energy of 400 keV and intensity of (1 -4)•10 19 e/сm 2 s. Fine particles of a new phase in size ≤10 nm are formed also. These features can be identified from an analysis of moiré fringe contrast as phase of ZnO 2 . Similar defects in single crystals of ZnS formed in situ after irradiation in a transmission electron microscope JEM-100CX operated at energy of 100 keV and intensity of 3,5•10 17 e/сm 2 s. It was found that the formation of structural defects in ZnS under electron irradiation with above-threshold energy of defect formation (400 keV) is similar to the formation of structural defects in these crystals under electron irradiation with sub-threshold defect formation energy (100 keV).

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The subthreshold radiation effects in semiconductors

Cited by 57 publications

References 43 publications

Effects of hydrogenation on non-radiative defects in GaNP and GaNAs alloys: An optically detected magnetic resonance study

Effects of hydrogenation on non-radiative defects in GaNP and GaNAs alloys: An optically detected magnetic resonance study

Effect of postgrowth hydrogen treatment on defects in GaNP

Formation of dislocation loops and voids in electron irradiated zinc selenide single crystals

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