Formation of dislocation loops and voids in electron irradiated zinc selenide single crystals

Abstract

Abstract. The formation of small dislocation loops in size of 2.5 -45 nm and a density of 1.4•10 11 cm -2 , as well as voids in size ≤10 nm in ZnS crystals were found by the transmission electron microscopy method (TEM). Samples were examined and irradiated in situ in а JEOL 4000ЕХ-II electron microscope operated at energy of 400 keV and intensity of (1 -4)•10 19 e/сm 2 s. Fine particles of a new phase in size ≤10 nm are formed also. These features can be identified from an analysis of moiré fringe contrast as phase of ZnO 2 . Similar defects in single crystals of ZnS formed in situ after irradiation in a transmission electron microscope JEM-100CX operated at energy of 100 keV and intensity of 3,5•10 17 e/сm 2 s. It was found that the formation of structural defects in ZnS under electron irradiation with above-threshold energy of defect formation (400 keV) is similar to the formation of structural defects in these crystals under electron irradiation with sub-threshold defect formation energy (100 keV).