Distant DAP bands in electron-irradiated and ion-implanted CdSe

Abstract

The photoluminescence spectra of electron irradiated and ion implanted CdSe in the edge‐emission (EE) region are studied. In the case of CdSe: Cl bombarded with 1.5 MeV electrons followed by furnace annealing above 300 K a new 14155 cm−1 band (B2) appears which is interpreted as the formation of an acceptor‐like complex of the from VCdClSe stable below 470 K. The CdSe: P samples show an enhancement of the 13970 cm−1 band which does not show any relation to P‐ion doping. In Cl+‐implanted and laser annealed CdSe samples a new 14200 cm−1 band (DAP) is observed which disappears after additional furnace annealing at 470 K. It is suggested that a similar VCdClSe complex is responsible for the 14200 cm−1 band behaviour. In the case of P+‐ and Ar+‐implanted CdSe it is found that laser annealing reduces the EE intensity to an unmeasurable value.