Electron paramagnetic resonance of boron acceptors in isotopically purified silicon

Tezuka, Hideaki; Stegner, Andre R.; Tyryshkin, Alexei M.; Shankar, Shyam; Thewalt, M. L. W.; Lyon, S. A.; Itoh, Kohei M.; Brandt, Martin S.

doi:10.1103/physrevb.81.161203

Cited by 25 publications

(14 citation statements)

References 17 publications

(29 reference statements)

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“…3(b)) on P. We observed Landau-Zener-Stuckelberg-Majorana interference at frequencies ranging from 10 GHz to 70 GHz. The dependence of the peak height on P agrees with the theoretical square Bessel function expression 35 . Landau-Zener-Stuckelberg-Majorana interference is observable even if the energy of one photon hf is smaller than the measurement temperature (1.5 K).…”

Section: Fig S5 Landau-zener-stuckelberg-majorana Interference In Dsupporting

confidence: 80%

High-temperature operation of a silicon qubit

Ono

Mori

Moriyama

2019

Sci Rep

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This study alleviates the low operating temperature constraint of Si qubits. A qubit is a key element for quantum sensors, memories, and computers. Electron spin in Si is a promising qubit, as it allows both long coherence times and potential compatibility with current silicon technology. Si qubits have been implemented using gate-defined quantum dots or shallow impurities. However, operation of Si qubits has been restricted to milli-Kelvin temperatures, thus limiting the application of the quantum technology. In this study, we addressed a single deep impurity, having strong electron confinement of up to 0.3 eV, using single-electron tunnelling transport. We also achieved qubit operation at 5–10 K through a spin-blockade effect based on the tunnelling transport via two impurities. The deep impurity was implemented by tunnel field-effect transistors (TFETs) instead of conventional FETs. With further improvement in fabrication and controllability, this work presents the possibility of operating silicon spin qubits at elevated temperatures.

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Section: Fig S5 Landau-zener-stuckelberg-majorana Interference In Dsupporting

confidence: 80%

High-temperature operation of a silicon qubit

Ono

Mori

Moriyama

2019

Sci Rep

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“…1(d) gives a g-factor of 1.80. This is much larger than the value 1.1 observed for Boron dopants in bulk Si [30], while smaller than the value 2.0 of the dangling bond defect centers at the siliconoxynitride interface [31]. We generally expect shallower defects to be more affected by the spin-orbit nature of the valence band, and their g-factors should be smaller than the value of deep dangling bond defects.…”

mentioning

confidence: 57%

Hole Spin Resonance and Spin-Orbit Coupling in a Silicon Metal-Oxide-Semiconductor Field-Effect Transistor

et al. 2017

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We study hole spin resonance in a p-channel silicon metal-oxide-semiconductor field-effect transistor. In the sub-threshold region, the measured source-drain current reveals a double dot in the channel. The observed spin resonance spectra agree with a model of strongly coupled two-spin states in the presence of a spin-orbit-induced anti-crossing. Detailed spectroscopy at the anticrossing shows a suppressed spin resonance signal due to spin-orbit-induced quantum state mixing. This suppression is also observed for multi-photon spin resonances. Our experimental observations agree with theoretical calculations.PACS numbers: 73.63. Kv, 73.23.Hk, The silicon-based metal-oxide-semiconductor fieldeffect transistor (MOSFET) is a key element of largescale integrated circuits that are at the core of modern technology. Looking into the future, a universal faulttolerant quantum computer also requires a huge number of physical qubits, on the order of 10 8 or more [1,2]. As such, a qubit integrated with the standard Si MOS-FET architecture would be truly attractive from the perspectives of scaling up and leveraging existing technologies. One example of such a qubit is the spin of an impulity/defect in the channel of a Si MOSFET. Indeed, spin qubits defined in Si nano-devices are not only compatible with current silicon technology, but are also known to be one of the most quantum coherent among known qubit designs [3][4][5][6][7][8][9][10][11][12][13].Although there are many studies of impurities and defects in Si [14], single impurity/defect in the channel of a Si MOSFET has only recently been studied experimentally, by single-electron tunneling [15][16][17][18][19]. Spins of such defects are difficult to characterize because of their weakly-interacting nature. Controlling the spins of impurities in a MOSFET, as well as in a gate-confined quantum dot, can be achieved much more easily in a pchannel MOSFET than an n-channel. The reason is that the larger spin-orbit interaction (SOI) of a hole (-like) spin enables the spin resonance by an oscillatory electric field, instead of a magnetic field, at microwave frequencies under typical sub-Tesla static magnetic fields. Such electrically-driven spin resonance (EDSR) has been demonstrated in III-V devices [20][21][22][23], as well as in Si [24][25][26], while SOI effects in gate-confined Si quantum dots have been investigated in the spin blockade region [27]. However, systematic investigations of EDSR * E-mail address: k-ono@riken.jp † these authors contributed equally to this work under the direct influence of SOI have not been performed in Si, the material that provides an ideal stage for studying SOI due to the minor presence of nuclear spins.In this work we study sub-threshold transport and EDSR in a short p-channel Si MOSFET, and quantitatively reveal the effects of SOI and EDSR on lifting the spin blockade. Specifically, our transport measurements demonstrate that there are two effective dots in the channel, which allow us to identify a spin blockade regime and explore spin reso...

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“…In this experiment the modulation amplitude f (τ ) is given by the Overhauser field gradients which is also the limiting noise source for the coherence time. Therefore, an experimental realization in a silicon device (Si/SiGe or SiMos) significantly improves the RX qubit due better control (replacing Overhauser fields with a gradient from a micromagnet [58]) combined with a longer decoherence time from isotopic purification [226,227,228,83,174]. The initialization techniques, read-out schemes, and physical implementation are identical to the conventional EO qubit.…”

Section: Resonant Exchange (Rx) Qubitmentioning

confidence: 99%

Three-electron spin qubits

Russ

Burkard

2017

J. Phys.: Condens. Matter

103

117

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The goal of this article is to review the progress of three-electron spin qubits from their inception to the state of the art. We direct the main focus towards the exchange-only qubit (Bacon et al 2000 Phys. Rev. Lett. 85 1758-61, DiVincenzo et al 2000 Nature 408 339) and its derived versions, e.g. the resonant exchange (RX) qubit, but we also discuss other qubit implementations using three electron spins. For each three-spin qubit we describe the qubit model, the envisioned physical realization, the implementations of single-qubit operations, as well as the read-out and initialization schemes. Two-qubit gates and decoherence properties are discussed for the RX qubit and the exchange-only qubit, thereby completing the list of requirements for quantum computation for a viable candidate qubit implementation. We start by describing the full system of three electrons in a triple quantum dot, then discuss the charge-stability diagram, restricting ourselves to the relevant subsystem, introduce the qubit states, and discuss important transitions to other charge states (Russ et al 2016 Phys. Rev. B 94 165411). Introducing the various qubit implementations, we begin with the exchange-only qubit (DiVincenzo et al 2000 Nature 408 339, Laird et al 2010 Phys. Rev. B 82 075403), followed by the RX qubit (Medford et al 2013 Phys. Rev. Lett. 111 050501, Taylor et al 2013 Phys. Rev. Lett. 111 050502), the spin-charge qubit (Kyriakidis and Burkard 2007 Phys. Rev. B 75 115324), and the hybrid qubit (Shi et al 2012 Phys. Rev. Lett. 108 140503, Koh et al 2012 Phys. Rev. Lett. 109 250503, Cao et al 2016 Phys. Rev. Lett. 116 086801, Thorgrimsson et al 2016 arXiv:1611.04945). The main focus will be on the exchange-only qubit and its modification, the RX qubit, whose single-qubit operations are realized by driving the qubit at its resonant frequency in the microwave range similar to electron spin resonance. Two different types of two-qubit operations are presented for the exchange-only qubits which can be divided into short-ranged and long-ranged interactions. Both of these interaction types are expected to be necessary in a large-scale quantum computer. The short-ranged interactions use the exchange coupling by placing qubits next to each other and applying exchange-pulses (DiVincenzo et al 2000 Nature 408 339, Fong and Wandzura 2011 Quantum Inf. Comput. 11 1003, Setiawan et al 2014 Phys. Rev. B 89 085314, Zeuch et al 2014 Phys. Rev. B 90 045306, Doherty and Wardrop 2013 Phys. Rev. Lett. 111 050503, Shim and Tahan 2016 Phys. Rev. B 93 121410), while the long-ranged interactions use the photons of a superconducting microwave cavity as a mediator in order to couple two qubits over long distances (Russ and Burkard 2015 Phys. Rev. B 92 205412, Srinivasa et al 2016 Phys. Rev. B 94 205421). The nature of the three-electron qubit states each having the same total spin and total spin in z-direction (same Zeeman energy) provides a natural protection against several sources of noise (DiVincenzo et al 2000 Nature 408 339, Taylor et al 2013 Phys. R...

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Electron paramagnetic resonance of boron acceptors in isotopically purified silicon

Cited by 25 publications

References 17 publications

High-temperature operation of a silicon qubit

High-temperature operation of a silicon qubit

Hole Spin Resonance and Spin-Orbit Coupling in a Silicon Metal-Oxide-Semiconductor Field-Effect Transistor

Three-electron spin qubits

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