Electron paramagnetic resonance in diamond implanted at various energies and temperatures

Brosious, P. R.; Lee, Y. H.; Corbett, J. W.; Cheng, Li‐Jen

doi:10.1002/pssa.2210250221

Cited by 16 publications

(2 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Morhange et alfound similar annealing behaviour as Brosious et al(1974a). Brosious et al(1974b) found that if the nitrogen ions are implanted at high temperatures (2: 600 "C) the spectra appear to be a superposition of two signals. One is the line observed at room-temperature implantation, while the other is due to a centre A4, which they interpreted as being due to a S = 1 state with small D value and (1 11) symmetry.…”

Section: Defects Introduced By Ion Implantation In Diamondmentioning

confidence: 77%

Electron spin resonance in the study of diamond

1978

View full text Add to dashboard Cite

The role of electron spin resonance in the study of both natural and synthetic diamond is reviewed in this article. A brief survey of the physical significance of the constants in the spin Hamiltonian, as well as experimental technique, is given. The review then deals in some detail with the various nitrogen centres found in diamond, treating exchange-interaction, Jahn-Teller and relaxation effects associated with these centres. Acceptor impurities and transition-ion impurities are briefly discussed. The rest of the review is then devoted to centres created by irradiation, subsequent heat treatment, mechanical deformation and ion implantation. The spin Hamiltonian parameters of these centres are tabled and the results are discussed within the framework of the defect molecule approach. I n conclusion, the correlation between optical effects and the ESR measurements in the case of four defect centres are discussed in some detail as this seems to be a powerful method of testing the various models suggested for the observed defects. It is hoped that the tables given of the observed centres found in diamond up to the present will be useful to researchers in this field.

show abstract

Section: Defects Introduced By Ion Implantation In Diamondmentioning

confidence: 77%

Electron spin resonance in the study of diamond

1978

View full text Add to dashboard Cite

show abstract

“…Therefore, hot iiiiplantation a t an elevated temperature was indicated as an alternative means to reduce the aniorphous carbon in diamond. I n a subsequent study [ 5 ] we carried out implantations into diamond samples a t temperatures ranging from 25 to 650 "C.…”

Section: Introductionmentioning

confidence: 99%

High-temperature ion implantation in diamond

Lee

Brosious

Corbett

1978

Phys. Stat. Sol. (a)

Self Cite

View full text Add to dashboard Cite

C+ and N+ implantation into type IIa diamond are performed at various temperatures (25 to 1000°C) and ion‐induced damage is studied by EPR measurements at 1.2 to 300 K. Hot implantation at 1000°C results in a reduced spin density of “amorphous” carbon by an order of magnitude less than that due to cold‐implantation and a subsequent annealing at 1000°C. Moreover, hot implantation above 600°C produces two new spin‐1 centers, A‐5 and A‐6, which are tentatively identified as a small multivacancy cluster.

show abstract

ESR Study of Phosphorus Implanted Type IIa Diamond

Casanova

Gheeraert

Deneuville

et al. 2000

phys. stat. sol. (a)

View full text Add to dashboard Cite

Cold Implantation and Rapid Annealing (CIRA) at 1050 C of P in IIa diamond crystal, then further annealing at 1400 C were performed. EPR signals were obtained in particular (i) around g 2.003, from``dangling bondº defects whose total concentration increases with the dose and decreases after annealing, but remains higher than the dose, (ii) a pair of isotropic symmetrical signals with a constant DH 28 G independent of the dose and of annealing were detected. They are ascribed to paramagnetic P in substitutional sites. For the highest dose after annealing, an IR absorption can be detected at energies corresponding to transitions between the fundamental and the excited levels of the effective mass like P donor center in diamond. The calculated donor density from IR is in agreement with the density of spins in the 28 G hyperfine lines. N. Casanova et al.: ESR Study of Phosphorus Implanted Type IIa Diamond 5 1 )

show abstract

Electron paramagnetic resonance in diamond implanted at various energies and temperatures

Cited by 16 publications

References 12 publications

Electron spin resonance in the study of diamond

Electron spin resonance in the study of diamond

High-temperature ion implantation in diamond

ESR Study of Phosphorus Implanted Type IIa Diamond

Contact Info

Product

Resources

About