High-temperature ion implantation in diamond

Lee, Y. H.; Brosious, P. R.; Corbett, J. W.

doi:10.1002/pssa.2210500127

Cited by 23 publications

(3 citation statements)

References 13 publications

(4 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…39 In the fluence used in our present work, damage cascades could overlap (1 × 10 13 cm −2 ∼ 1/(3 nm) 2 ). So, we employed in-situ annealing in order to prevent excess vacancies from accumulating and thus a high degree of crystallinity was preserved.…”

Section: B Ensemble Measurements Using High Fluence and In-situ Annementioning

confidence: 87%

“…38 In the case of 1.7 MeV N + implantation (10 16 cm −2 ) into type IIa diamond crystal, the spin density of the EPR signal arising from amorphous carbon after in-situ annealing at 1000 • C was lower by an order of magnitude than ex-situ anneal-ing. 39 In the fluence used in our present work, damage cascades could overlap (1 × 10 13 cm −2 ∼ 1/(3 nm) 2 ). So, we employed in-situ annealing in order to prevent excess vacancies from accumulating and thus a high degree of crystallinity was preserved.…”

Section: B Ensemble Measurements Using High Fluence and In-situ Annea...mentioning

confidence: 87%

See 1 more Smart Citation

Extending spin coherence times of diamond qubits by high-temperature annealing

et al. 2013

View full text Add to dashboard Cite

Spins of negatively charged nitrogen-vacancy (NV − ) defects in diamond are among the most promising candidates for solid-state qubits. The fabrication of quantum devices containing these spin-carrying defects requires position-controlled introduction of NV − defects having excellent properties such as spectral stability, long spin coherence time, and stable negative charge state. Nitrogen ion implantation and annealing enable the positioning of NV − spin qubits with high precision, but to date, the coherence times of qubits produced this way are short, presumably because of the presence of residual radiation damage. In the present work, we demonstrate that a high temperature annealing at 1000• C allows 2 millisecond coherence times to be achieved at room temperature. These results were obtained for implantation-produced NV − defects in a high-purity, 99.99% 12 C enriched single crystal chemical vapor deposited diamond. We discuss these remarkably long coherence times in the context of the thermal behavior of residual defect spins. [Published in Physical Review B 88, 075206 (2013)]

show abstract

Section: B Ensemble Measurements Using High Fluence and In-situ Annementioning

confidence: 87%

Section: B Ensemble Measurements Using High Fluence and In-situ Annea...mentioning

confidence: 87%

Extending spin coherence times of diamond qubits by high-temperature annealing

et al. 2013

View full text Add to dashboard Cite

show abstract

“…For the ion-implantation technique the fluences required usually result in graphitization 11,12 , a process that cannot be reversed 13 . Here, we take advantage of (i) high energy implantation to bury the B layer deep inside the diamond where it is subjected to high internal pressures, keeping the lattice intact even under extreme implantation conditions, (ii) high temperature implantation to promote dynamic annealing during the implantation to inhibit graphitization [14][15][16][17] . Residual damage can then be removed by a post implantation annealing step 18 .…”

Section: Introductionmentioning

confidence: 99%

Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures

Beveren

Liu

Bowers

et al. 2016

Journal of Applied Physics

View full text Add to dashboard Cite

Boron implantation with in-situ dynamic annealing is used to produce highly conductive sub-surface layers in type IIa (100) diamond plates for the search of a superconducting phase transition. Here we demonstrate that high-fluence MeV ionimplantation, at elevated temperatures avoids graphitization and can be used to achieve doping densities of 6 at.%. In order to quantify the diamond crystal damage associated with implantation Raman spectroscopy was performed, demonstrating high temperature annealing recovers the lattice. Additionally, low-temperature electronic transport measurements show evidence of charge carrier densities close to the metal-insulator-transition. After electronic characterization, secondary ion mass spectrometry was performed to map out the ion profile of the implanted plates. The analysis shows close agreement with the simulated ion-profile assuming scaling factors that take into account an average change in diamond density due to device fabrication. Finally, the data show that boron diffusion is negligible during the high temperature annealing process. a)

show abstract

Diamond(C), EPR spectra A1 – A11

Landolt-Börnstein - Group III Condensed Matter

View full text Add to dashboard Cite

High-temperature ion implantation in diamond

Cited by 23 publications

References 13 publications

Extending spin coherence times of diamond qubits by high-temperature annealing

Extending spin coherence times of diamond qubits by high-temperature annealing

Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures

Diamond(C), EPR spectra A1 – A11

Contact Info

Product

Resources

About