Electron-hole transition in spherical QD-QW nanoparticles based on GaN∣(In,Ga)N∣GaN under hydrostatic pressure

Impurity-related binding energy in strained (In,Ga)N asymmetric coupled QWs under strong built-in electric field

“…For the well (barrier) region, we have used the material parameters of In x Ga 1 À x N (GaN, AlGaN) since their physical parameters are well known and are used in our previous works [13,14]. In our calculation, we have used the same conduction band-offset ðQ c ¼ 0:7Þ between the conduction band and the valence band while the band-gap bowing parameter are b ¼ 3:8 for InGaN and b ¼ 1:3 for AlGaN [12].…”

Efficiency of InN/InGaN/GaN Intermediate-Band Solar Cell under the Effects of Hydrostatic Pressure, In-Compositions, Built-in-Electric Field, Confinement, and Thickness

“…This equation is calculated within the framework of both the one-band parabolic theory and the effective mass approach. It has been numerically solved using the finite element method (FEM) due to the increased complexity arising from the inclusion of the Coulombian term (impurity), rendering it almost analytically unsolvable [ 36 , 37 , 38 ]. where is the electron charge and , denotes the electron–impurity distance, while represents the dielectric constant of the vacuum; and are the electron’s effective mass and the relative dielectric constant, respectively, both contingent upon the pressure, composition, and displacement of the particle.…”

“…This equation is calculated within the framework of both the one-band parabolic theory and the effective mass approach. It has been numerically solved using the finite element method (FEM) due to the increased complexity arising from the inclusion of the Coulombian term (impurity), rendering it almost analytically unsolvable [36][37][38].…”

Control of simultaneous effects of the temperature, indium composition and the impact ionization process on the performance of the InN/InxGa1-Afkir1, Feddi2, Meziane3 et al. 2019Opto-Electronics Review6010View full textAdd to dashboardCite

“…In the following, we present the impact of the different parameters on the efficiency of solar cells based on InGaN material. Let us underline that temperature or substitution degree, electronic and optical properties of semiconductor materials are considerably altered [19][20][21][22]. This results in a change of the impact-ionization process and of the energy conversion efficiency of both conventional solar cells (p-n) and intermediate band solar cells (QD-IBSC) p-i-n undergo a considerable change.…”