Electron heating in GaAs due to electron-electron interactions

Brill, Boaz; Heiblum, Moty

doi:10.1103/physrevb.49.14762

Cited by 16 publications

(14 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In an analogous configuration, a differential gain in the collector current is observed in three dimensional structures. This was explained by nondirectional heating of the electron system [5,6]. It should be stressed that in a two-dimensional system, we observe an absolute gain in I C without biasing C ÿ B, and over a base region that is 2 orders of magnitude longer.…”

mentioning

confidence: 56%

See 1 more Smart Citation

Absolute Negative Resistance Induced by Directional Electron-Electron Scattering in a Two-Dimensional Electron Gas

Kaya

Eberl

2007

Phys. Rev. Lett.

View full text Add to dashboard Cite

A three-terminal device formed by two electrostatic barriers crossing an asymmetrically patterned two-dimensional electron gas displays an unusual potential depression at the middle contact, yielding absolute negative resistance. The device displays momentum and current transfer ratios that far exceed unity. The observed reversal of the current or potential in the middle terminal can be interpreted as the analog of Bernoulli's effect in a Fermi liquid. The results are explained by directional scattering of electrons in two dimensions.

show abstract

mentioning

confidence: 56%

“…In that case, I C , and hence , is only a function of P in and not of p x or V E . On the other hand, if the directionality of the injected beam is preserved over the base, will be a function of p x or V E [5]. The variation of versus P in calculated from V E data of Fig.…”

mentioning

confidence: 99%

Absolute Negative Resistance Induced by Directional Electron-Electron Scattering in a Two-Dimensional Electron Gas

Kaya

Eberl

2007

Phys. Rev. Lett.

View full text Add to dashboard Cite

show abstract

“…The nonvanishing phonon-absorption peaks at 5.3 K [ Fig. 3(a)]are thought to be due to hole thermalization, 36 which provides necessary phonons for assisting the photoemission of holes. 20 A similar absorption of acoustic phonons is observed at 1.5 K, when phonons are generated by a heater.…”

Section: /∇mentioning

confidence: 99%

Direct observation of spin-orbit splitting and phonon-assisted optical transitions in the valence band by internal photoemission spectroscopy

Lao

Perera

et al. 2013

Phys. Rev. B

View full text Add to dashboard Cite

We employ internal photoemission spectroscopy to directly measure the valence-band Van Hove singularity, and identify phonons participating in indirect intervalence-band optical transitions. Photoemission of holes photoexcited through transitions between valence bands displays a clear and resolvable threshold, unlike previous reports of interband critical points which become obscure in doped materials. We also demonstrate the enhancement of optical phonon-assisted features primarily contributing to the photoemission yield. This result is evidence of the relaxation of photoexcited hot holes through intravalence-band scatterings in heterojunctions, which contrast with intervalence-band scatterings in bulks.

show abstract

“…The injected hot electrons heat the cold electrons which are confined in the thin, doped GaAs layer of the device. This manifests itself in a collector current which is larger than the input current [30,31]. Later, they also reported on ballistic electron transport studies in high-purity GaAs at low temperatures [32,33].…”

Section: Ballistic Electron Transport In Heterostructuresmentioning

confidence: 99%

Hot electron spectroscopy and microscopy

2004

View full text Add to dashboard Cite

Semiconductor heterostructures, such as double-barrier resonant tunnelling diodes and superlattices, are nowadays used for many applications. One very versatile and powerful method to study electronic transport in heterostructures is hot electron spectroscopy. Hot electron spectroscopy can be carried out in two complementary versions: device-based techniques usually employ so-called hot electron transistors (HETs), while ballistic electron emission microscopy (BEEM) uses a scanning tunnelling microscope (STM) as the source of ballistic electrons.In this review, spectroscopic results obtained by these two methods are compared and discussed. It is shown that BEEM results are strongly influenced by electron refraction effects, while the behaviour of HET devices is dominated by inelastic scattering effects in the base and drift region of the device. Thus, STM-based BEEM/S and HET-based spectroscopy are genuinely complementary methods, which yield supplementary results.

show abstract

Electron heating in GaAs due to electron-electron interactions

Cited by 16 publications

References 14 publications

Absolute Negative Resistance Induced by Directional Electron-Electron Scattering in a Two-Dimensional Electron Gas

Absolute Negative Resistance Induced by Directional Electron-Electron Scattering in a Two-Dimensional Electron Gas

Direct observation of spin-orbit splitting and phonon-assisted optical transitions in the valence band by internal photoemission spectroscopy

Hot electron spectroscopy and microscopy

Contact Info

Product

Resources

About