Absolute Negative Resistance Induced by Directional Electron-Electron Scattering in a Two-Dimensional Electron Gas

Kaya, İsmet I.; Eberl, K.

doi:10.1103/physrevlett.98.186801

Cited by 20 publications

(18 citation statements)

References 12 publications

(11 reference statements)

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“…38 In reality, charge redistribution in energy occurs not only due to the voltage probe but through various inelastic scattering mechanisms. 39,40 In our model, the probe can be turned on and off with a coupling parameter.…”

Section: Voltage Probe Modelmentioning

confidence: 99%

Gap theory of rectification in ballistic three-terminal conductors

Jordan

Büttiker

2008

Phys. Rev. B

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We introduce a model for rectification in three-terminal ballistic conductors, where the central connecting node is modeled as a chaotic cavity. For bias voltages comparable to the Fermi energy, a strong nonlinearity is created by the opening of a gap in the transport window. Both noninteracting cavity electrons at arbitrary temperature as well as the hot-electron regime are considered. Charging effects are treated within the transmission formalism using a self-consistent analysis. The conductance of the third lead in a voltage probe configuration is varied to also model inelastic effects. We find that the basic transport features are insensitive to all of these changes, indicating that the nonlinearity is robust and well suited to applications such as current rectification in ballistic systems. Our findings are in broad agreement with several recent experiments.

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Section: Voltage Probe Modelmentioning

confidence: 99%

Gap theory of rectification in ballistic three-terminal conductors

Jordan

Büttiker

2008

Phys. Rev. B

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“…Of course, the well-known ohmic behavior should be addressed where the electronic transport for organic structures is length inversely dependent when aromatic rings associated with others molecular structures. [2][3][4][5][6] Although, one of the most important phenomena is provoked by the structural changes as soliton, polaron and bipolarons. The Polyacetylene has fundamental degenerated electronic states and the extra carrier in the structure provoke a structural deformation.…”

Section: Introductionmentioning

confidence: 99%

“…[2][3][4][5][6] It is possible to organize in a few steps and the most usual situation is when the Fermi level of contact (metallic) is between the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) provoking the majority carriers transport decrease with the length of the molecule. Henceforth, if the electronic transport has a length independent, e.g., dominated by contact scattering increasing with the number of atoms bonded.…”

Section: Introductionmentioning

confidence: 99%

Design of Highly Integrated Organic Nanodevice

Silva¹,

Nero²

2009

Jnl of Comp & Theo Nano

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In recent experimental work it was found that for a current-voltage bistability in/an organic semiconductor working as multilevel switching (B. C. Das and A. J. Pal, Organ. Electron. 9, 39 (2008). Due to the experimental motivation, we simulate the electronic distribution properties as charge accumulation/depletion-voltage and capacitive effects-voltage of a similar organic compound by means of the quantum mechanics methodology. Also, our theoretical results are consistent with: (i) similar behavior for positive bias when compared with experimental one; (ii) prediction as asymmetric feature for negative bias, e.g., asymmetric majority carrier transportation curve for Ponceau SS device; (iii) resonance tunneling type conduction in the I-V signature. For both bias (positive and negative) the resonance is addressed and it explains as a bi-directional molecular transistor or memory device.

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“…5; other experiments describing related physics but, in part, based upon different effects have been performed since the 1990s. 6,7 II. DEVICE AND SETUP Figure 1(a) shows an atomic force micrograph of the device used to demonstrate the electronic Venturi effect.…”

Section: Introductionmentioning

confidence: 99%

An electron jet pump: The Venturi effect of a Fermi liquid

Taubert¹,

Schinner²,

Tomaras³

et al. 2011

Journal of Applied Physics

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A three-terminal device based upon a two-dimensional electron system is investigated in the regime of nonequilibrium transport. Excited electrons scatter with the cold Fermi sea and transfer energy and momentum to other electrons. A geometry analogous to a water jet pump is used to create a jet pump for electrons. Because of its phenomenological similarity we name the observed behavior the "electronic Venturi effect." V C

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Absolute Negative Resistance Induced by Directional Electron-Electron Scattering in a Two-Dimensional Electron Gas

Cited by 20 publications

References 12 publications

Gap theory of rectification in ballistic three-terminal conductors

Gap theory of rectification in ballistic three-terminal conductors

Design of Highly Integrated Organic Nanodevice

An electron jet pump: The Venturi effect of a Fermi liquid

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