Design of Highly Integrated Organic Nanodevice

Abstract

In recent experimental work it was found that for a current-voltage bistability in/an organic semiconductor working as multilevel switching (B. C. Das and A. J. Pal, Organ. Electron. 9, 39 (2008). Due to the experimental motivation, we simulate the electronic distribution properties as charge accumulation/depletion-voltage and capacitive effects-voltage of a similar organic compound by means of the quantum mechanics methodology. Also, our theoretical results are consistent with: (i) similar behavior for positive bias when compared with experimental one; (ii) prediction as asymmetric feature for negative bias, e.g., asymmetric majority carrier transportation curve for Ponceau SS device; (iii) resonance tunneling type conduction in the I-V signature. For both bias (positive and negative) the resonance is addressed and it explains as a bi-directional molecular transistor or memory device.