Electron field emission from ZnO self-organized nanostructures and doped ZnO:Ga nanostructured films

Karpyna, V. A.; Еvtukh, А.А.; Semenenko, M.; Лазоренко, В. Й.; Lashkarev, G. V.; Khranovskyy, Volodymyr; Yakimova, Rositza; Fedorchenko, D. A.

doi:10.1016/j.mejo.2008.07.018

Cited by 18 publications

(9 citation statements)

References 5 publications

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“…ZnO is a wide direct band gap semiconductor, which has a number of applications in optoelectronics [1,2], such as light emitters [3], electron emitters [4] or photo detectors [5]. The performance of the devices depends on the structural quality of the material and is strongly influenced by the presence of different defects like impurity, dislocations and/or stacking faults [6].…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence study of basal plane stacking faults in ZnO nanowires

Khranovskyy¹,

Eriksson²,

Radnóczi³

et al. 2014

Physica B: Condensed Matter

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Section: Introductionmentioning

confidence: 99%

Photoluminescence study of basal plane stacking faults in ZnO nanowires

Khranovskyy¹,

Eriksson²,

Radnóczi³

et al. 2014

Physica B: Condensed Matter

Self Cite

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“…where E is electric field, q is unit charge, f ox is the energy barrier that must be overcome by electrons, m* is electron mass in as-prepared micro/nanowires, h is the reduced Planck constant, and C 2 = 6.82 Â 10 3 (eV À3/2 V mm À1 ). 37,38 The slope of data fitting under high voltage in Fig. 4f led to an extracted electron barrier height (q f ox ) of about 58.87 meV at RT.…”

Section: Temperature Response and Memory Effectmentioning

confidence: 95%

“…4d, the annealed device shows a nonvolatile HRS at a read-out voltage lower than 0.5 V. With increasing bias voltage, the current jumps abruptly at the voltage of about 4.2 V, switching from HRS to LRS and is accompanied by a large hysteresis loop, as shown in Fig. 4e; thus, a reset process occurs at about 4.2 V. The corresponding I-V curve was fitted by Fowler-Nordheim (FN) tunnelling, 33,[36][37][38][39][40]…”

Section: Temperature Response and Memory Effectmentioning

confidence: 99%

Ultrahigh performance negative thermal-resistance switching based on individual ZnO:K, Cl micro/nanowires for multibit nonvolatile resistance random access memory dual-written/erased repeatedly by temperature or bias

et al. 2015

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“…The slope of data fi tting at a high voltage, representing the barrier height ( qφ FN ) for electron extraction from traps, is about 97 meV at RT, [46][47][48] as shown in Figure S4 (Supporting Information). Owing to the presence of trap states in the interface of ZnO wires and Ag electrodes, the nonlinear I -V characteristics of back-to-back diodes can be observed signifi cantly.…”

Section: Introductionmentioning

confidence: 99%

Gate‐Free Controlled Multibit Memories Based on Individual ZnO:In Micro/Nanowire Back‐to‐Back Diodes

Zhao

Cheng

Xiao

et al. 2016

Adv Elect Materials

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interface between ZnO micro/nanowires and metal electrodes due to the presence of surface states, makes the two-terminal device based on ZnO micro/nanowire a candidate for fabricating Schottkybased back-to-back diodes. Moreover, the Schottky-based back-to-back diodes always accompany with the resistive switching (RS) effect. The switching mechanism, such as formation/rupture of conducting fi lament, [ 21,22 ] charge-trap model alteration of Schottky barrier, [ 23,24 ] space-charge-limited current, [ 25 ] and Mott transition, [ 26,27 ] have been reported to explain the origin of RS properties. The Schottky-like diode can also be easily formulated by hybridization, heterostructure, and doping. [ 28,29 ] Abundant defects can be introduced by doping, resulting in the formation of traps with different levels. Additionally, annealing treatment in hydrogen atmosphere can also form miscellaneous deep trap levels for charge storage reservoir. [30][31][32][33] For resolving the diffi culty to realize the actively tunable Schottky diode, many publications have a tendency to set up gate voltages or complex confi gurations. [33][34][35] In this work, twoterminal devices, based on individual In-doped ZnO micro/ nanowires, were fabricated for the fi rst time, in which the I-V characteristics of the back-to-back diode can be controllably regulated by temperature and drain-source voltage ( V DS ) without the assistance of gate voltage. The introduction of indium impurities in ZnO leads to the formation of modulated superstructure, generating abundant traps. The conduction mechanism dominantly originates from the modulation of trap-related Schottky-barrier height at the metal-semiconductor interface by the fi ling/emptying of electron in traps. Electrons can be extracted from traps via a thermal excitation in the condition of heating and relatively low operation voltage, and contrarily they can be injected into traps by applying a relatively high V DS at room temperature. Moreover, the fi lled depth of trap states strongly depends on the externally applied V DS . In addition, the electrons can stably be localized in traps after completely removing the applied V DS , resulting in a memory effect. Therefore, not only tunable RS but nonvolatile multibit resistance random access memory (RRAM) can be obtained effectively. Results and DiscussionRepresentative XRD pattern of as-synthesized product is shown in Figure 1 a. All the diffraction peaks can be indexed to ZnO with a hexagonal wurtzite structure (JCPDS No. 36-1451).

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Electron field emission from ZnO self-organized nanostructures and doped ZnO:Ga nanostructured films

Cited by 18 publications

References 5 publications

Photoluminescence study of basal plane stacking faults in ZnO nanowires

Photoluminescence study of basal plane stacking faults in ZnO nanowires

Ultrahigh performance negative thermal-resistance switching based on individual ZnO:K, Cl micro/nanowires for multibit nonvolatile resistance random access memory dual-written/erased repeatedly by temperature or bias

Gate‐Free Controlled Multibit Memories Based on Individual ZnO:In Micro/Nanowire Back‐to‐Back Diodes

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