Electron bombardment induced conductivity in amorphous silicon

Abstract

Optically induced conductivity changes in dischargeproduced hydrogenated amorphous silicon

Electron Bombardment Induced Photoconductivity and High Gain in a Flat Panel Photodetector Based on a ZnS Photoconductor and ZnO Nanowire Field Emitters

“…In order to obtain the electron bombardment for a photoconductor, a vacuum diode-type cold cathode device , was designed for exploring the EBIPC mechanism, which is shown schematically in Figure . A ZnS photoconductor has been used as a target in the image intensifier of camera tubes for use in low-light detection , and exhibits the advantages of high exciton binding energy, large-area fabrication, low cost, and ease of integration. , As such, it is of great promise for use in large-area and highly sensitive detectors. ZnO NW field emitters have been used in large-area flat panel vacuum devices.…”

“…Therefore, the enhanced light response performance was associated with the electron bombardment from the cold cathode and its influence on the ZnS photoconductor. Early studies also suggested that the conductivity of a semiconductor could be enhanced by electron bombardment. − …”

“…25−28 For example, Hatanaka et al had obtained the electron multiplication factors of EBIC of 300−500 in a hydrogenated amorphous silicon film at an accelerating voltage of 7 kV. 26 In an image intensifier using the EBIC effect, a photocathode emits electrons in response to a light image. The electrons are electrostatically focused and accelerated to high energy before bombarding the vidicon target having an array of charge storage diodes on its output side.…”

“…In addition, early studies about the electron beam induced conductivity (EBIC) effect had been widely investigated, and the EBIC effect was mainly utilized in probing the electrical properties of nanowires devices at a nanometric scale and for the image intensifier target in camera tubes for low-level light detection. − For example, Hatanaka et al had obtained the electron multiplication factors of EBIC of 300–500 in a hydrogenated amorphous silicon film at an accelerating voltage of 7 kV . In an image intensifier using the EBIC effect, a photocathode emits electrons in response to a light image.…”