Electron Bombardment Induced Photoconductivity and High Gain in a Flat Panel Photodetector Based on a ZnS Photoconductor and ZnO Nanowire Field Emitters

Zhang, Zhipeng; Wang, Kai; Zheng, Kang; Deng, Shaozhi; Xu, Ning; Chen, Jun

doi:10.1021/acsphotonics.8b00949

Cited by 34 publications

(20 citation statements)

References 49 publications

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“…Larger area one-dimensional (1D) cold cathode arrays play an important role in panel light sources, flat-panel X-ray sources, and photodetectors [ 1 , 2 , 3 , 4 ]. In these materials, field emission properties from zinc oxide (ZnO) nanowire has been extensively studied in recent years [ 5 , 6 , 7 , 8 , 9 , 10 , 11 ], demonstrating facile synthesis of uniform large-area samples that possess low turn-on fields, good emission stabilities, and uniform emission site [ 12 , 13 ].…”

Section: Introductionmentioning

confidence: 99%

High Current Field Emission from Large-Area Indium Doped ZnO Nanowire Field Emitter Arrays for Flat-Panel X-ray Source Application

et al. 2021

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Large-area zinc oxide (ZnO) nanowire arrays have important applications in flat-panel X-ray sources and detectors. Doping is an effective way to enhance the emission current by changing the nanowire conductivity and the lattice structure. In this paper, large-area indium-doped ZnO nanowire arrays were prepared on indium-tin-oxide-coated glass substrates by the thermal oxidation method. Doping with indium concentrations up to 1 at% was achieved by directly oxidizing the In-Zn alloy thin film. The growth process was subsequently explained using a self-catalytic vapor-liquid-solid growth mechanism. The field emission measurements show that a high emission current of ~20 mA could be obtained from large-area In-doped sample with a 4.8 × 4.8 cm2 area. This high emission current was attributed to the high crystallinity and conductivity change induced by the indium dopants. Furthermore, the application of these In-doped ZnO nanowire arrays in a flat-panel X-ray source was realized and distinct X-ray imaging was demonstrated.

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Section: Introductionmentioning

confidence: 99%

High Current Field Emission from Large-Area Indium Doped ZnO Nanowire Field Emitter Arrays for Flat-Panel X-ray Source Application

et al. 2021

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“…Quasi‐1D (Q1D) metal oxide nanostructures, such as zinc oxide (ZnO) nanowires, are regarded as a potential candidate for field emitter arrays (FEAs), which are applied in field emission photo detector, [ 1–2 ] parallel electron beam lithography [ 3 ] and flat panel X‐ray source, [ 4–6 ] because of their advantages of high uniformity and excellent field emission characteristics. Numerous devices using Q1D ZnO nanostructures based FEAs have been demonstrated in the past decade.…”

Section: Introductionmentioning

confidence: 99%

“…Numerous devices using Q1D ZnO nanostructures based FEAs have been demonstrated in the past decade. [ 1–10 ] However, their performance still cannot meet commercialization requirements. How to further improve the emission current density of large‐scale Q1D ZnO FEAs is particularly the major challenge that requires not only comprehensive knowledge on the intrinsic field emission mechanism of individual field emitter but also improvement on the actual proportion of field emitters that contribute to the FEAs.…”

Section: Introductionmentioning

confidence: 99%

Stable Heating Above 900 K in the Field Emission of ZnO Nanowires: Mechanism for Achieving High Current in Large Scale Field Emitter Arrays

Chen

Luo

Cao

et al. 2020

Adv Elect Materials

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FEAs is particularly the major challenge that requires not only comprehensive knowledge on the intrinsic field emission mechanism of individual field emitter but also improvement on the actual proportion of field emitters that contribute to the FEAs. In addition to the screen effect, [11] thermal runaway is an important factor limiting the actual proportion of ZnO nanowire. [12] A general picture for the thermal runaway originated from the positive feedback of the self-heating characteristic of the Q1D field emitter on its thermal field emission current, which induces vacuum breakdown. Although several previous works have studied the thermal runaway mechanism for Q1D field emitter [13-15] and the melting of ZnO nanowire has been reported, suggesting the existence of thermal runaway, [12,16] the question of what temperature the individual Q1D ZnO field emitter can reach steadily, which determines the maximum emission current and breakdown field, remains unclear. With a high breakdown field, more emitters can be activated when increasing the applied field. One could also make better use of the ballasting effect usually existing in the ZnO nanowire field emitter itself [5] or equipped with an active driving device [17-18] and thus a highly uniform stable emission and a high emission current could be achieved. The field emission ring pattern was reported as a signature for the thermal field emission of the tungsten tip and the carbon nanotube (CNT). [19-21] It generally comprises the emission current from both the tip and the sidewall of the field emitter. Accordingly, one can obtain the thermal field emission current distribution along the emitter, which gives information on its temperature, by analyzing the ring pattern profile. [20] Compared to the field emission electron energy distribution that has been utilized to measure the temperature of individual CNT, [22] the method of field emission pattern is more simple. Furthermore, it can be applied in a large-scale substrate with potential application as a temperature monitor for FEAs. Although field emission ring patterns comprising several emission spots have been reported in ZnO nanowires, [23-24] they are different from those observed from the CNT, which is a continue ring. Their underlying mechanisms are due to the tip structure and the adsorbate instead of the thermal field emission. Considering that the ZnO nanowire The thermal runaway of a quasi-1D (Q1D) field emitter is an important cause of vacuum breakdown, which limits the field emission current density in field emitter arrays (FEAs). Comprehensive knowledge on the self-heating process of zinc oxide (ZnO) nanowires is important for obtaining a high breakdown field for activating more emitters. This work investigates the self-heating model of individual ZnO nanowire by considering the thermal field emission current distribution along the nanowire. Theoretical calculations suggest that the thermal field emission distribution along the nanowire can be reflected on the profile of the field emission pattern, ...

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“…Stability is a longstanding problem for developing a field emission electron source, which is the key component in modern high‐resolution electron microscopy, flat‐panel X‐ray sources, and other imaging technologies . This is due to the difficulty of achieving a clean surface, as dangling bonds caused by lattice defects at the surface are inevitable.…”

Section: Introductionmentioning

confidence: 99%

Highly Stable Field Emission from a Tungsten Diselenide Monolayer on Zinc Oxide Nanowire by Geometrically Modulating Hot Electrons

Chen

Liu

Zheng

et al. 2019

Adv Elect Materials

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Compared with traditional thermal electron sources, field‐emission electron sources have many advantages, such as high brightness, coherence, and suitability for miniaturization. However, their instability has prevented their widespread use. Stable field emission from a hybrid structure with a tungsten diselenide (WSe2) monolayer on zinc oxide (ZnO) nanowires is achieved by geometrically modulating the WSe2 curvature. It is found that an emitter with a lower WSe2 curvature induces hotter electrons during field emission, which results in a low turn‐on field and high stability. Considering the similarity of 2D materials, a general approach for obtaining a highly stable field emitter using a 2D–1D hybrid structure is provided.

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Electron Bombardment Induced Photoconductivity and High Gain in a Flat Panel Photodetector Based on a ZnS Photoconductor and ZnO Nanowire Field Emitters

Cited by 34 publications

References 49 publications

High Current Field Emission from Large-Area Indium Doped ZnO Nanowire Field Emitter Arrays for Flat-Panel X-ray Source Application

High Current Field Emission from Large-Area Indium Doped ZnO Nanowire Field Emitter Arrays for Flat-Panel X-ray Source Application

Stable Heating Above 900 K in the Field Emission of ZnO Nanowires: Mechanism for Achieving High Current in Large Scale Field Emitter Arrays

Highly Stable Field Emission from a Tungsten Diselenide Monolayer on Zinc Oxide Nanowire by Geometrically Modulating Hot Electrons

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