“…In crystalline materials the electron beam induced current technique (EBIC) has been largely applied either to qualitatively study defects, grain boundary, depletion, and inversion layer as was reported by Lander et al (1963) and MacDonald and Everhart (1965) or to quantitatively investigate transport properties leading to the determination of diffusion length, surface recombination velocity, and lifetime as was reported by Wittry and Keyser (1965), Wu and Wittry (19781, and Leamy (1982). In amorphous silicon, one can expect to derive information from EBIC measurements such as the depth collection profile (Najar et al, 1991), the potential or field distribution, and hopefully the density of gap states (Rajopadhye et al, 1988) and other transport parameters. In these approaches, some calculation parameters need to be known, such as the mean electron hole pair creation energy, the electron energy range, and the electron generation function.…”