Abstract:The electron beam induced current technique was used to study electron energy loss in amorphous hydrogenated silicon a-Si:H. This study leads to the determination of the electron generation function which is needed when using the variable energy electron beam induced current technique (EBIC) analysis of a-Si:H device. A series of identical n-i-p a-Si:H diodes with a thin aluminium top electrodes were fabricated and varying thicknesses of a-Si:H layer were deposited on it. In EBIC measurements, the n-i-p diode … Show more
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