1992
DOI: 10.1116/1.585978
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Electron-beam lithography with the scanning tunneling microscope

Abstract: The scanning tunneling microscope (STM), operated in vacuum in the field emission mode, has been used in lithographic studies of the resist SAL-601 from Shipley. Patterns have been written by raising the tip-sample voltage above-12 V while operating the STM in the constant current mode. Resist films, 50 nm thick, have been patterned and the pattern transferred into the GaAs substrate by reactive ion etching. The variation of feature size with applied dose and tip-sample bias voltage has been studied. Compariso… Show more

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Cited by 71 publications
(28 citation statements)
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“…Most of these techniques take advantage of the spatial resolution of the electronic emission from a tip to locally expose ultrathin electron resists [367][368][369][370], such as self-assembled monolayers [371,372] or Langmuir-Blodgett films [373], or to directly modify the structure of the superficial layer [374][375][376][377], such as the oxygenation of hydrogenated silicon [378,379]. A few methods based on mechanically engraving a soft layer with the sharp atomic microscope tip have also been proposed [380].…”
Section: Introductionmentioning
confidence: 99%
“…Most of these techniques take advantage of the spatial resolution of the electronic emission from a tip to locally expose ultrathin electron resists [367][368][369][370], such as self-assembled monolayers [371,372] or Langmuir-Blodgett films [373], or to directly modify the structure of the superficial layer [374][375][376][377], such as the oxygenation of hydrogenated silicon [378,379]. A few methods based on mechanically engraving a soft layer with the sharp atomic microscope tip have also been proposed [380].…”
Section: Introductionmentioning
confidence: 99%
“…Alternatively, the STM can be used to expose organic resist layers. For example, McCord et al 3 have used poly͑methylmethacrylate͒ PMMA, Marrian et al 4 have used SAL 601 and recently Stockman et al 5 have used a Langmuir-Blodgett film. Since these layers do not always conduct sufficiently, the STM tip can penetrate the resist during lithography which can limit the tip lifetime due to mechanical interactions between tip and layer.…”
mentioning
confidence: 99%
“…[1][2][3][4][5][6][7] In scanning tunneling microscopy tip-substrate interactions are very local, making it possible to modify the surface of a substrate to a very high lateral resolution ͑Ͻ20 nm͒. Several methods to fabricate metallic nanowires using this technique, have been demonstrated.…”
mentioning
confidence: 99%
“…It may be possible to achieve lower minimum feature sizes by patterning at other soft X-ray energies. Patterning with lower energy electrons has been reported to decrease linewidths [51,52] but to our knowledge this has not been explored for patterning with monochromatic X-rays. We note that lower electron beam energy is not intrinsically a recipe for higher resolution since the electron beam writers used to fabricate the smallest zone width zone plates, such as the LBNL Nanowriter [53], operate at 50-100 keV.…”
Section: Improving the Optics And Exploring New Energiesmentioning
confidence: 98%