Electron-beam induced etching of resist with water vapor as the etching medium

Platen, K. T. Kohlmann-von; Bruenger, W. H.

doi:10.1116/1.588587

Cited by 17 publications

(12 citation statements)

References 7 publications

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“…This dependence is similar to that of SE yields which decrease as ∼ V −0 8 (Ref. [20]). We assume that the decrease in SE yields causes a reduction in the number of gas ions, resulting in the small etched widths.…”

Section: Resultssupporting

confidence: 63%

Electron Beam Nanoprocessing of a Carbon Nanotube Film Using a Variable Pressure Scanning Electron Microscope

Niitsuma¹,

Sekiguchi²,

Yuan³

et al. 2007

J. Nanosci. Nanotech.

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We demonstrate a novel method of processing carbon nanotubes using a variable pressure scanning electron microscope. Lines were processed in a nanotube film by electron beam irradiation in oxygen gas and nitrogen gas. The processing mechanism can be explained in terms of gas ion sputtering and chemical reaction. In this experiment, the narrowest line width of 120 nm was achieved in a nitrogen atmosphere.

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Section: Resultssupporting

confidence: 63%

Electron Beam Nanoprocessing of a Carbon Nanotube Film Using a Variable Pressure Scanning Electron Microscope

Niitsuma¹,

Sekiguchi²,

Yuan³

et al. 2007

J. Nanosci. Nanotech.

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“…12). Etching of amorphous carbon and PMMA is also reported in literature 49,50 . High resolution etching of silica can be realized by focussing an electron beam onto the substrate in the presence of fluorine containing gases such as Xenon di-fluoride (XeF 2 ).…”

Section: Dielectric Structuresmentioning

confidence: 73%

Comparison of fabrication methods of sub-100nm nano-optical structures and devices

et al. 2005

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Nano-optical devices are raising more and more interest for a variety of applications. From single molecule detection at high molecular concentration by Fluorescence Correlation Spectroscopy (FCS) through optical multiplexing with photonic crystal structures into the exciting field of negative index of refraction materials, the hardware functional dimensions and surely the tolerances are reaching the lower tens of nanometer range. The fabrication of such devices, i.e. the machining of optically interesting materials and material combinations (dielectric, semiconducting, or metallic) at this scale needs adaptation of classical nanostructuring technologies like Electron Beam Lithography (EBL), or the application of serial direct machining technologies like Focused Charged Particle Beam Etching or Deposition with electrons or Ga ions. For low excitation volume FCS measurements, EBL is used for production of high quality nanoscale sub-wavelength apertures in optically opaque (150 nm thick) metal films. The process consists in high aspect ratio patterning of a thick negative e-beam resist film followed by metal lift off. The optically transparent substrate allows the production of any 2D aperture geometry. Difficulties of the production process and their limits are presented. Direct serial machining with charged particle beams shows excellent flexibility and is an interesting 3D alternative method. Deposition by decomposing volatile chemicals under an ion/electron probe, which can be as small as 7nm/1nm, this technique allows for rapid, local prototyping of 2D and 3D nano-structures with highest lateral and axial resolution. The deposited material can be tuned to homogeneous, nanocomposite or crystalline, metallic or transparent, opening the way to applications in photonic crystals and plasmonics. An original in-situ micro-reflectometry method permits the real time control of the growth of the deposits.

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“…They can be difficult to remove by wet cleaning from small, deep patterns such as contact holes, where hydrodynamic flows cannot dislodge them as easily as from free surfaces or long grooves. Some defects, especially made of amorphous carbon or residuals from polymer resists, can be easily removed by FEB-induced etching [9,23]. Two selected examples of removed adders on EUV masks are shown in Fig.…”

Section: Soft Defects/particle Addersmentioning

confidence: 99%

“…Let us stress out just a few points here. Firstly, many investigations on etching and deposition were conducted in parallel (compare for instance [4][5][6][7] or [8,9]). Secondly, many improvements and ideas were triggered by technological needs (from developments in space science to scanning probe microscopy or magnetic data storage).…”

Section: Introductionmentioning

confidence: 99%

Industrial perspective on focused electron beam-induced processes

2014

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After a short overview of the historical developments of the technique of gas-assisted focused electron beam-induced processing (mostly deposition and etching), this paper deals with the applications of this technology to photolithographic mask repair. A commented list of results is shown on different mask types, for different types of defects, and at different node generations. The scope of this article is double: summarize the state of the art in a fastpaced highly specific industrial environment driven by ''Moore's law'' and feedback to academic researchers some technologically relevant directions for further investigations.

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Electron-beam induced etching of resist with water vapor as the etching medium

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Cited by 17 publications

References 7 publications

Electron Beam Nanoprocessing of a Carbon Nanotube Film Using a Variable Pressure Scanning Electron Microscope

Electron Beam Nanoprocessing of a Carbon Nanotube Film Using a Variable Pressure Scanning Electron Microscope

Comparison of fabrication methods of sub-100nm nano-optical structures and devices

Industrial perspective on focused electron beam-induced processes

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