Electron-assisted chemical etching of oxidized chromium

Sun, Yiyong; Wang, S.; White, John; Stivers, Alan R.; Liang, Ted

doi:10.1016/j.apsusc.2004.11.090

Cited by 3 publications

(1 citation statement)

References 8 publications

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“…[14][15][16] Also, the focused electron beam induced etching of chromium, 17 alumina, 18 gallium arsenide, 19 or PMMA resist 20 could be carried out successfully. However, no focused electron beam induced etching process for germanium has been reported until now.…”

Section: Introductionmentioning

confidence: 99%

Crystallinity-retaining removal of germanium by direct-write focused electron beam induced etching

Roediger

Wanzenboeck

Hochleitner

et al. 2011

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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In this work, a well-controllable, direct-write, resistless, and crystallinity-retaining etching process for germanium using a focused electron beam with nanometer resolution has been developed. This process allows for precise, local, and efficient removal of germanium from a surface without showing any spontaneous etching effects. This focused electron beam induced etching process of germanium substrates employs pure chlorine gas as etchant. The presented process was carried out in a conventional scanning electron microscope equipped with a custom-tailored gas injection system. The etch rate of this etching process was observed to be up to 0.32 μm3 min−1 or 12 nm min−1 for an area of 1.5×1.5 μm2. The influence of various etching parameters such as electron beam current, acceleration voltage and chlorine gas flow on the etch rate as well as the shape of the etch pits have been studied systematically by atomic force microscopy analysis. It is demonstrated that etching of amorphous germanium films can be performed significantly faster (∼8 times) than etching of crystalline germanium. Finally, a comparison between silicon etching and germanium etching by chlorine is presented.

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Section: Introductionmentioning

confidence: 99%

Crystallinity-retaining removal of germanium by direct-write focused electron beam induced etching

Roediger

Wanzenboeck

Hochleitner

et al. 2011

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Focused, Nanoscale Electron-Beam-Induced Deposition and Etching

Randolph

Fowlkes

Rack

2006

Critical Reviews in Solid State and Materials Sciences

390

401

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Gas-assisted focused electron beam and ion beam processing and fabrication

Utke¹,

Hoffmann²,

Melngailis³

2008

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

953

1,316

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Beams of electrons and ions are now fairly routinely focused to dimensions in the nanometer range. Since the beams can be used to locally alter material at the point where they are incident on a surface, they represent direct nanofabrication tools. The authors will focus here on direct fabrication rather than lithography, which is indirect in that it uses the intermediary of resist. In the case of both ions and electrons, material addition or removal can be achieved using precursor gases. In addition ions can also alter material by sputtering ͑milling͒, by damage, or by implantation. Many material removal and deposition processes employing precursor gases have been developed for numerous practical applications, such as mask repair, circuit restructuring and repair, and sample sectioning. The authors will also discuss structures that are made for research purposes or for demonstration of the processing capabilities. In many cases the minimum dimensions at which these processes can be realized are considerably larger than the beam diameters. The atomic level mechanisms responsible for the precursor gas activation have not been studied in detail in many cases. The authors will review the state of the art and level of understanding of direct ion and electron beam fabrication and point out some of the unsolved problems.

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Electron-assisted chemical etching of oxidized chromium

Cited by 3 publications

References 8 publications

Crystallinity-retaining removal of germanium by direct-write focused electron beam induced etching

Crystallinity-retaining removal of germanium by direct-write focused electron beam induced etching

Focused, Nanoscale Electron-Beam-Induced Deposition and Etching

Gas-assisted focused electron beam and ion beam processing and fabrication

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