We report the electrical and optical characteristics of avalanche photodiodes fabricated in GaN grown by metalorganic chemical vapor deposition. The current–voltage characteristics indicate a multiplication of >25. Experiment indicates and simulation verifies that the magnitude of the electric field at the onset of avalanche gain is ⩾3 MV/cm. Small-area devices exhibit stable gain with no evidence of microplasmas.

We constructed the microsatellite-based linkage maps using 318 markers typed in two F(1) outbred families of Zhikong scallop (Chlamys farreri). The results showed an extremely high proportion (56.2%) of non-amplifying null alleles and a high ratio (30%) of segregation distortion. By aligning different individual-based linkage maps, 19 linkage groups were identified, which are consistent with the haploid chromosome number of Zhikong scallop. The integrated linkage map contains 154 markers covering 1561.8 cM with an average intermarker spacing of 12.3 cM and 77.0% of genome coverage. We found that the heterogeneity in recombination rate was not determined by sexes but by different individuals on 18 linkage regions. The phenotypic marker of general shell colour was placed on LG4, which was flanked by microsatellite markers CFLD064 and CFBD055. Four size-related traits including shell length (SL), shell width (SW), shell height (SH) and gross weight (GW) were analysed to identify the putative quantitative trait loci (QTL). Under the half-sib model, using dam as common parent, three, two, two and one QTL affecting SL, SW, SH and GW exceeded the genome-wide thresholds respectively. While using sir as common parent, a larger number of QTL were detected for these four traits: four, five, three and two for SL, SW, SH and GW respectively. The single QTL explained 3.7-19.2% of the phenotypic variation. The linkage map and the QTL associated with economic traits will provide useful information for marker-assisted selection of Zhikong scallop.

Each coordinate rotation digital computer iteration selects the rotation direction by analyzing the results of the previous iteration. In this paper, we introduce two arctangent radices and show that about 2/3 of the rotation directions can be derived in parallel without any error. Some architectures exploiting these strategies are proposed.

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A dark count rate in InP-based single photon counting avalanche photodiodes is a limiting factor to their efficacy. The temperature dependence of the dark count rate was studied to understand its origin in In0.53Ga0.47As∕In0.52Al0.48As separate-absorption-charge-multiplication avalanche photodiodes. The dark count rate was observed to be a very weak function of temperature in the range from 77Kto300K. Various mechanisms for dark count generation were considered. Simulations of band-to-band tunneling in the In0.52Al0.48As multiplication layer were found to agree well with the experimental temperature dependence of dark count rate at various excess biases. To reduce tunneling-induced dark counts, a suitable design change to the detector structure is proposed.