Electron accumulation layer on clean In-terminated InAs(0 0 1)(4×2)-c(8×2) surface

Padova, Paola De; Quaresima, C.; Perfetti, P.; Larciprete, R.; Brochier, R.; Richter, Christine; Ilakovac, V.; Benčok, P.; Teodorescu, Cristian M.; Aristov, V. Yu.; Johnson, Robert L.; Hricovíni, K.

doi:10.1016/s0039-6028(01)00927-x

Cited by 38 publications

(28 citation statements)

References 21 publications

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“…1a, in agreement with previous observations [6,18]. After condensation of 3.5 ML Bi, the LEED pattern was weak and blurry (4 Â 1)/(1 Â 3) (Fig.…”

Section: Resultssupporting

confidence: 92%

“…On the clean surface, the VBM is located round 0.5 eV below the E F , (which is higher than the 0.57 eV given in Ref. [6]. Earlier studies have shown a surface state in this binding energy region, referred to as n 2 [14].…”

Section: Resultsmentioning

confidence: 61%

“…In the NE-spectrum A 1 and S o are marked. The first of these was earlier identified as a surface state [13], and S o (weak intensity at the Fermi level) was earlier observed and interpreted as emission from the accumulation layer on the clean surface [6].…”

Section: Resultsmentioning

confidence: 88%

“…The (1 1 0) surface has been found to form such layers after adsorption of various metals [1][2][3] while they are directly found on the pristine (1 0 0) and (1 1 1) surfaces [4]. It was suggested that an accumulation layer on the (1 0 0) surface is induced by donor-like intrinsic surface states whose density is determined by the surface reconstruction [5,6]. Theoretical calculations confirm the importance of native defects and the proportionality between host anion and cation covalent radii on the 'averaged band edge' for accumulation layer formation [7].…”

Section: Introductionmentioning

confidence: 99%

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Electronic structure of bismuth terminated InAs(100)

et al. 2009

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“…1a, in agreement with previous observations [6,18]. After condensation of 3.5 ML Bi, the LEED pattern was weak and blurry (4 Â 1)/(1 Â 3) (Fig.…”

Section: Resultssupporting

confidence: 92%

Section: Resultsmentioning

confidence: 61%

Section: Resultsmentioning

confidence: 88%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Electronic structure of bismuth terminated InAs(100)

et al. 2009

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“…25 A Fermi edge at higher kinetic energy than the VBM becomes visible after the normal incidence sputtering, due to the formation of metallic In islands on the surface. 26 The valence band edge also becomes more pronounced upon sputtering. The In 4d core level from the untreated sample is used along with a linear fit of the valence band edge, also from the untreated sample, to determine the value of E V -C .…”

Section: Figmentioning

confidence: 99%

X-ray photoemission spectroscopic investigation of surface treatments, metal deposition, and electron accumulation on InN

Rickert

Ellis

Himpsel

et al. 2003

Applied Physics Letters

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The effects of surface chemical treatments and metal deposition on the InN surface are studied via synchrotron-based photoemission spectroscopy. Changes in the In 4d core level as well as the valence band spectra are reported. The surface Fermi level position, E F , relative to the valence band maximum was determined for both Au and Ti Schottky barriers. E F lies at an energy of 0.7 eV above the valence band maximum for Au deposited on annealed InN and 1.2 eV above the valence band maximum for Ti deposited on Ar-sputtered InN. These results that the surface Fermi level lays at or above the conduction band maximum when a value of InN band gap of 0.7-0.9 eV is assumed.

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Measuring surface state density and energy distribution in InAs nanowires

Halpern

Cohen

Gross

et al. 2014

Physica Status Solidi (a)

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Semiconducting nanowires are expected to have applications in various areas as transistors, sensors, resonators, solar cells, and thermoelectric systems. Understanding the surface properties is crucial for the fabrication of high‐performance devices. Due to the large surface‐to‐volume ratio of nanowires, their surface electronic properties, like surface states, can a have a large effect on the performance of both electronic and optoelectronic devices. At present, determination of the surface state density depends on a combination of experimental measurements of the capacitance and/or drain current, in a nanowire field‐effect transistor, and a fitting to simulation. This technique follows certain assumptions, which can severely harm the accuracy of the extracted density of states. In this report, we demonstrate a direct measurement of the surface state density of individual InAs and silicon nanowires. The method is based on measuring the surface potential of a nanowire field‐effect transistor, with respect to a changing gate bias. The extracted density of states at the surface helps to explain various electronic phenomena in such devices.

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Electron accumulation layer on clean In-terminated InAs(0 0 1)(4×2)-c(8×2) surface

Cited by 38 publications

References 21 publications

Electronic structure of bismuth terminated InAs(100)

Electronic structure of bismuth terminated InAs(100)

X-ray photoemission spectroscopic investigation of surface treatments, metal deposition, and electron accumulation on InN

Measuring surface state density and energy distribution in InAs nanowires

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