Electronic structure of bismuth terminated InAs(100)

Properties of self-assembled Bi nanolines on InAs(100) studied by core-level and valence-band photoemission, and first-principles calculations

“…47,49 The same feature is also present on the Bi terminated surface, which suggests that it originates from the backbonds of the In atoms of the third surface layer, since the dimer bonds of the surface In (or As) dimers break as a consequence of Bi deposition. Similar assumption was also made by Szamota-Leandersson et al 35 The most interesting changes occur in the top of the valence band, presented in Fig. 8.…”

“…A similar LEED pattern has also been observed for the Bi-induced InAs(100) surface previously with similar coverage. 34,35 In our experiments, we observed a clear (2 × 6) structure for a number of coverages from 1 ML up to 3 MLs even without annealing, which indicates that the surface has a periodic structure. However, this (2 × 6) pattern does not correspond to an ordered reconstruction, but rather an average over the surface with "meandering" lines.…”

“…Similar values for the Gaussian widths have also been used before. 34,35,39,43 First we consider the spectra from the surface without the lines, i.e., the Bi/InAs(100)(2 × 1). Although the discussion of the core-level shifts of the Bi/InAs(100) nanoline surface in context of the clean InAs(100)c(8 × 2) shifts might be useful, we find it misleading since the atomic structures of the clean and Bi-induced InAs(100) surface reconstructions are very different, and thus their core-level shifts are not well comparable.…”

“…However, stronger band bending has also been found for this surface. 24,35 Therefore the E f pinning seems to depend on the preparation conditions or the surface quality. 53 Also, it may be of interest to note here that for the molecular-beam epitaxy grown samples the E f was found 0.02 eV below the CBM for the clean In-terminated InAs(100)(4 × 2).…”

Theoretical investigation of charge accumulation layer on the Bi-induced InAs(111)-(2 × 2) surface

“…12,13 However, Cs/InAs(111)B-(1 Â 1) surface did not induce an accumulation layer near the surface. 14 Szamota-Leandersson et al 15 have observed a charge accumulation layer on the well-ordered InAs(100)-(2 Â 6)/c(2 Â 12) surface, however, not on the poorly ordered layer. In a recent work, 16 they have investigated the Bi-covered InAs(111)B-(2 Â 2) surface using synchrotron radiation photoelectron spectroscopy and LEED techniques.…”