X-ray photoemission spectroscopic investigation of surface treatments, metal deposition, and electron accumulation on InN

Rickert, Kimberly Anne; Ellis, Arthur B.; Himpsel, F. J.; Lu, Hai; Schaff, William J.; Redwing, Joan M.; Dwikusuma, F.; Kuech, T. F.

doi:10.1063/1.1573351

Cited by 74 publications

(59 citation statements)

References 25 publications

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“…whether the Fermi level is located within the fundamental band gap or shifted into the conduction band, has been strongly debated. In the latter case an electron accumulation at the surfaces of the crystal is induced [65]. Such an electron accumulation is frequently observed at polar and non-polar InN surfaces [66,67], raising the question of whether it is an intrinsic material property or not.…”

Section: Energetic Position Of the Fermi Levelmentioning

confidence: 99%

Non‐polar group‐III nitride semiconductor surfaces

Eisele

Ebert

2012

Physica Rapid Research Ltrs

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The intrinsic structural and electronic properties of a surface are important for any further study or application of the material, especially when a high surface‐to‐volume ratio is obtained or the surface gets functionalized, as e.g. during growth. Due to increasing material quality over recent years, the first experimental results are now available for the non‐polar group‐III nitride semiconductor surface, which can be compared with previously reported theoretical calculations. While the reports on AlN and InN surfaces are still small in number, for GaN quite a lot of experimental results on the non‐polar surfaces were published on the intrinsic geometric and electronic properties, the defects, the decomposition, and the effect of impurities. Furthermore, the growth on non‐polar group‐III nitride surfaces is a new concept to reduce undesirable piezoelectric polarization in heterostructures and the side walls of wurtzite‐structured nano‐wires are formed mostly by non‐polar facets. Hence, we review the existing intrinsic structural and electronic properties of non‐polar surfaces of group‐III nitride semiconductors in this contribution.magnified imageThe three different non‐polar surfaces of III–V semiconductors with filled (bright green) and empty (bright red) dangling bonds: left (red) the (10\bar 10) surface of the wurtzite crystal structure, middle (blue) the (11\bar 20) surface of the wurtzite crystal structure, and right (green) the ({110}) surface of the zincblende structure. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Energetic Position Of the Fermi Levelmentioning

confidence: 99%

Non‐polar group‐III nitride semiconductor surfaces

Eisele

Ebert

2012

Physica Rapid Research Ltrs

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“…Hence, experiments need to be performed either at heteroepitaxially grown layers [2,7,10,[13][14][15][16][17][18] or at nanostructures [4,8,19]. However, heteroepitaxially grown layers typically contain a high density of defects, while nanostructures show interface and/or surface effects, both leading to a rather complex data interpretation.…”

Section: Introductionmentioning

confidence: 99%

Intrinsic electronic properties of high-quality wurtzite InN

et al. 2016

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Recent reports suggested that InN is a highly unusual III-V semiconductor, whose behavior fundamentally differs from that of others. We therefore analyzed its intrinsic electronic properties on the highest available quality InN layers, demonstrating the absence of electron accumulation at the (1010) cleavage surface and in the bulk. The bulk electron density is governed solely by dopants. Hence, we conclude that InN acts similarly to the other III-V semiconductors and previously reported intriguing effects are related to low crystallinity, surface decomposition, nonstoichiometry, and/or In adlayers.

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“…Since InN has a band gap of 0.65 eV at room temperature, this indicates that the surface Fermi level is 0.69 eV above the conduction band minimum ͑CBM͒, consistent with previous studies employing highresolution electron-energy-loss spectroscopy and ultraviolet photoemission spectroscopy. 2,12,13 Valence band photoemission spectra from a range of InGaN alloys are shown in Fig. 1͑b͒.…”

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confidence: 99%

Transition from electron accumulation to depletion at InGaN surfaces

Veal

Jefferson

Piper

et al. 2006

Applied Physics Letters

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The composition dependence of the Fermi-level pinning at the oxidized ͑0001͒ surfaces of n-type In x Ga 1−x N films ͑0 ഛ x ഛ 1͒ is investigated using x-ray photoemission spectroscopy. The surface Fermi-level position varies from high above the conduction band minimum ͑CBM͒ at InN surfaces to significantly below the CBM at GaN surfaces, with the transition from electron accumulation to depletion occurring at approximately x = 0.3. The results are consistent with the composition dependence of the band edges with respect to the charge neutrality level.

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X-ray photoemission spectroscopic investigation of surface treatments, metal deposition, and electron accumulation on InN

Cited by 74 publications

References 25 publications

Non‐polar group‐III nitride semiconductor surfaces

Non‐polar group‐III nitride semiconductor surfaces

Intrinsic electronic properties of high-quality wurtzite InN

Transition from electron accumulation to depletion at InGaN surfaces

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