Electromigration behavior of Cu metallization interfacing with Ta versus TaN at high temperatures

Mardani, Shabnam; Norström, H; Smith, Ulf; Gustavsson, Fredrik; Olsson, Jörgen; Zhang, Shi-Li

doi:10.1116/1.4967372

Cited by 7 publications

(3 citation statements)

References 18 publications

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“…135,136 This nullified the benefits of capacitance scaling by implementing increasingly difficult to integrate highly porous extreme low-k ILD materials. 102 Further, efforts to downscale the thickness of the TNT barrier [136][137][138][139] or adopt alternate metallization materials [140][141][142][143][144][145] to mitigate the resistivity impact were only exacerbated by the use of highly porous ILD materials. Similarly, continued delays in the availability of EUV lithography [146][147][148] forced the adoption of intricate pitch division/multi-patterning techniques 149,150 that multiplied the patterning induced damage and increase in k value for porous ILDs.…”

Section: The End Of Permittivity Scaling?mentioning

confidence: 99%

Review—Beyond the Highs and Lows: A Perspective on the Future of Dielectrics Research for Nanoelectronic Devices

Jenkins

Austin

Conley

et al. 2019

ECS J. Solid State Sci. Technol.

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High-dielectric constant (high-k) gate oxides and low-dielectric constant (low-k) interlayer dielectrics (ILD) have dominated the nanoelectronic materials research scene over the past two decades, but they have recently reached a state of maturity and perhaps the limits of their scaling. Based on this, there is a need for a systematic review summarizing not only the historic research and achievements on high-k and low-k dielectrics, but also emerging device applications as well as an outlook of future challenges. We begin by first reviewing the factors that drove the emergence of low-k and high-k materials in nanoelectronics as ILD and gate dielectric materials, respectively, and the challenges and limits these materials ultimately approached in terms of permittivity scaling. We then illustrate that gate dielectric and ILD applications represent just a small fraction of the numerous dielectrics utilized in present day nanoelectronic products where permittivity scaling is now being increasingly demanded for materials such as dielectric spacers, trench isolation, and etch stopping layers. We conclude by examining the numerous new applications for dielectric materials that are emerging as the semiconductor industry transitions to novel patterning schemes, prepares for life post CMOS scaling, and explores ways to natively embed device functionality in the metal interconnect. For the former, we specifically examine the “colorful” requirements for the various enabling dielectric hardmask and spacer materials utilized in pitch division-multi-pattern processes and then discuss the role that selective area deposition of dielectrics and metals could play in reducing the complexity of such patterning processes. For the latter, we review the use of both high-k and low-k dielectrics in various metal-insulator-metal (MIM) structures as Fermi level de-pinning layers, tunnel diodes, and back-end-of-line (BEOL) compatible capacitive and resistive switching random access memory (ReRAM) elements. We further examine how dielectrics can hinder or aid new forms of computing such as quantum and neuromorphic in reaching their full potential. In conclusion, we find that while the field of dielectrics has a long history, it remains vibrant with numerous exciting new and old research vectors awaiting further exploration.

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Section: The End Of Permittivity Scaling?mentioning

confidence: 99%

Review—Beyond the Highs and Lows: A Perspective on the Future of Dielectrics Research for Nanoelectronic Devices

Jenkins

Austin

Conley

et al. 2019

ECS J. Solid State Sci. Technol.

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“…However, to date, a quantitative comparison of the damage detection performance of eddy-current method for composite and metallic materials is still missing [9] Copper (Cu) has become widely used as a connection material in very large integrated circuits due to its low electrical resistance and high resistance to electromigration [10][11][12]. However, copper can diffuse into silicon dioxide (SiO2) [13][14][15] and silicon (Si) at temperatures up to 200°C [16], which has a negative effect on the stability of electronic devices. Recently, many materials have been studied that can be used to create a thin metal film [17][18][19], but copper remains the most interesting of them, since it is difficult to form an intermetallic compound with Cu/Si, which ensures a relatively stable interface between them.…”

Section: Introductionmentioning

confidence: 99%

Automated Control Ofthe Thin Films Electricalconductivity by the Eddy Current Method

Malikov

2024

Eurasian phys. tech. j.

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The article considers the possibility of using the eddy current method of non-destructive testing for the problems of measuring the electrical conductivity of thin metal films. As the object of measurement, we used copper films of various thicknesses obtained by vacuum vapor deposition. A review of current trends in the use of copper films in modern industry and science is presented, and an analysis is made of current methods of non-destructive testing suitable for studying thin copper films. A brief description of the deposition method and the hardware-software complex for measuring the electrical conductivity of the film is presented. A calibration curve is presented, which makes it possible to restore the values of the electrical conductivity of the film from the value of the signal of the eddy current transducer. GaAs samples were selected to construct a calibration curve. The decision is explained by the proximity of the values of the electrical conductivity of this chemical compound to the calculated indicators of the obtained thin films. The results of testing films with different characteristics are presented and the distribution of the electrical conductivity of the films depending on the batch is shown. A series of practical measurements of thin films demonstrated the existence of a relationship between the mass of the initial substance that was subjected to deposition and the characteristics of the resulting films. According to different values of electrical conductivity within the same batch, it was concluded that there is a difference in the quality of deposition of different films.

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“…Copper (Cu) has been widely adopted as an interconnect material in very large scale integrated (VLSI) circuits because of its low electric resistance, good processibility, and high resistance to electromigration [1][2][3]. However, Cu is a more mobile material than other metals such as aluminum (Al) [4][5][6], and it can diffuse rapidly into the silicon dioxide (SiO2) and silicon (Si) at the temperature as low as 200°C [7], which reduces the stability of electronic devices. In the past decades, many materials have been studied [8][9][10], but copper (Cu) attracts more attentions since it is hard to form the intermetallic compound with Cu/Si, thereby providing a relatively stable interface between them.…”

Section: Introductionmentioning

confidence: 99%

Superminiature Eddy Current Probe for Measuring the Electrical Conductivity of Copper Thin Films

Ишков

Kunitsyn

2022

KEM

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The article considers the possibility of applying the eddy current method of non-destructive testing for measuring the electrical conductivity of new material - thin metal films. Copper films of various thickness obtained by physical vapour deposition were used as the measurement object. The deposition method and the hardware and software complex for measuring the electrical conductivity of the film were briefly described. A calibration curve that makes it possible to restore the values of the electrical conductivity of the material by the signal value of the eddy current probe was presented. The test results of films with different characteristics were given, and the distribution of the electrical conductivity of the films depending on the batch was shown. Based on different values of the electrical conductivity in a batch, the difference in deposition quality of various films was found.

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Electromigration behavior of Cu metallization interfacing with Ta versus TaN at high temperatures

Cited by 7 publications

References 18 publications

Review—Beyond the Highs and Lows: A Perspective on the Future of Dielectrics Research for Nanoelectronic Devices

Review—Beyond the Highs and Lows: A Perspective on the Future of Dielectrics Research for Nanoelectronic Devices

Automated Control Ofthe Thin Films Electricalconductivity by the Eddy Current Method

Superminiature Eddy Current Probe for Measuring the Electrical Conductivity of Copper Thin Films

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