Electrolytic Analog Transistor

Abstract

The electrolytic analog transistor is an operating model of the junction transistor which substitutes the reduced and oxidized forms of ions in solution for electrons and holes in a semiconductor. A base electrode makes a low-resistance contact to the solution and also serves to maintain the ratio of oxidized and reduced ions at an equilibrium v~lue, ~us establishing the potential of the solution. In P-N-P operation, a polarizable metal electrode (the er~lltter~ l~ held a.t such a potent!al a~ove the base electrode that the majority ions, the reduced form, are readIly OXidIzed at Its surface. An Identical electrode, the collector, is placed within a few ten.ths o! a millimeter of t~e emit~er. It is biased in such a way that the minority ions (the oxidized form) w.hlch diffuse from the em;tter to Its surface are reduced. Utilizing several oxidation-reduction couples and different ba~ electrodes, It l)as been found that values of a= -(Ole/aI,)v e in the neighborhood of unity can be obtamed. Because of the relatively low mobilities of ions in solution, the device operates only at low frequencies. The device may also have some application as a constant current element in transistor bias circuits.

Solar Redox Flow Batteries: Mechanism, Design, and Measurement

“…The energy difference between the CB bottom (E c ) and the VB top (E v ) determines the bandgap energy (E g ). The Fermi level (E f ) is defined as the electron energy level at 0 K. For a semiconductor at its intrinsic state (when the concentration of electrons is equal to that of holes), E f locates nearly in the middle [20] n-CdSe or carbon/Co(CH 3 COO) 2 electrode in 1 m OH − , S 2− and S Cation-specific membrane Sn in 1 m OH − , S 2− and S AM1 sunlight N/A 0.43 V N/A Single + Br − /Br 2 -I − /I 2 (1980) [21] n-MoSe 2 in 1 m HBr and 0.01 m Br 2 Nafion 315 Pt in 1 m HI and 0.18 m I 2 200 mW cm −2 6.2% 0.4-0.5 V 20.6 mA cm −2 Single + Se 2− /Se 2 2− -Cd/ Cd(OH) 2 (1980) [21] n-GaAs in 1 m NaSe, 0.1 m Se and 1 NaOH Nafion Cd in 2 m NaOH Xenon 100 mW cm −2 ≈4% 0.25-0.35 V 14.6 mA cm −2 Single + S 2− /S n 2− -Se 2− /Se 2 2− (1980) [21] n-CdSe in 1 m Na 2 S, 1 m S and 1 m NaOH Nafion Pt in 1 m Na 2 Se, 0.1 m Se and 1 m NaOH Xenon 100 mW cm −2 ≈4% 0.05-0.2 V 0.75 mA cm −2 Single + S 2− /S n 2− -Cd/ Cd(OH) 2 (1980) [21] n-CdSe in 1 m Na 2 S, 1 m S, 0.1 m Na 2 Se, 0.01 m Se and 1 m NaOH Nafion Cd in 2 m NaOH Xenon 100 mW cm −2 N/A 0.3-0.4 V 8.25 mA cm −2 Dual + MV + •/MV 2+ -I − /I 2 (1980) [22] n-WSe 2 Single + Br − /Br 2 -I − /I 2 (1982) [15] n-MoSe 2 Single + Ce 2+ /Ce 3+ -Fe 2+ / Fe 3+ (1982) [14] n-BaTiO 3 Single +I − /I 2 -AQ/AQH 2 (1983) [23] n-WSe 2 in 1 m KI, 0.5 m Na 2 SO 4 and 0.5 m H 2 SO 4 KCl salt bridge Vitreous carbon in 0.05 m AQ and 0.5 m H 2 SO 4 150 mW cm −2 N/A 0.26 V 1 mA cm −2 (with 20 Ω)…”

“…Loads L1 and L2 should be selected so that the current can flow through both L1 and L2 to C and A separately upon illumination while the current can only flow over L2 and L1 from storage electrode A to counter electrode C in darkness. Although these demonstrated batteries can reach almost theoretical storage efficiency, the relative low discharge voltage and the high cost of silver motivated the consideration of other storage electrodes, including FeS/Fe 2 S 3 , Hg/HgS, Ni/Ni(OH) 2 , and Zn/Zn(OH) 2 were considered as more suitable storage electrodes. The cell with the Sn electrode maintained 0.5 V/0.43 V under light/dark occasions and the one with Zn had a dark potential of 0.76 V with more dendritic growth and traces of H 2 generation.…”

dc characteristics of a nanoscale water-based transistor

“…So far, various types of large scale electrolyte transistors have been demonstrated [1][2][3] and several theoretical concepts were published in the past. 4 -6 Within the main goal of developing a nanodevice in which water is used as the main element, we have realized a nanoscale water-based transistor based on the variation of the pH of deionized water.…”

Transistor behavior via Au clusters etched from electrodes in an acidic gating solution: Metal nanoparticles mimicking conducting polymers

“…The maximum steady-state current density one can expect from electron transfer through a diffusing redox species i s given 13 by…”