Electroluminescence of In0.53Ga0.47As/GaAs0.5Sb0.5 type II multiple quantum well diodes lattice-matched to InP

Atomic arrangement in a CuPt-B-type ordered GaAsSb layer grown by molecular beam epitaxy observed by cross sectional scanning tunneling microscope

“…The growth rate of the GaAsSb was 0.70 mm/h. The Sb composition of y is 0.49 for the GaAs 1Ày Sb y on the (0 0 1) InP, which is nearly lattice matched to the (0 0 1) InP substrate [6,12,13].…”

Electroluminescence of In0.53Ga0.47As/GaAs0.5Sb0.5Type-II Multiple Quantum Well Light-Emitting Diodes Grown on (111)B InP by Molecular Beam Epitaxy

“…5) At present, the origin of this sub-peak is not clear. One possible mechanism is an asymmetry between the direct interface (GaAsSb on InGaAs) and the inverse interface (InGaAs on GaAsSb), 5) although further studies are still necessary to clarify the origin of the sub-peak. Figure 3 shows the temperature dependence of the EL intensity of the type-II MQW diode on (111)B InP substrate.…”

“…[1][2][3][4] Recently, 2 m wavelength lightemitting diodes using this material system have been fabricated by metal organic vapor phase epitaxy (MOVPE) and molecular beam epitaxy (MBE). 3,5) However, all of these studies are concerned with the multiple-quantum-well (MQW) structures grown on (100)-oriented InP substrates. It is very important and interesting to clarify the emission properties of the MQW diode grown on (111)-oriented InP substrate, since the laser diodes on (111) substrates are known to have characteristics superior to those on (100) substrates.…”

“…They consist of 15 periods of undoped MQW layer sandwiched by n-type and p-type In 0:53 Al 0:47 As cladding layers, which is essentially the same structure as that grown on (100) InP substrates. 5…”

Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP

“…Lasers 1, 2 and LEDs [3][4][5][6] have been developed using device architectures with different levels of complexity [7][8][9] on InAs or GaSb substrates for which the processing technology is relatively immature. [10][11][12] By comparison, InP based technology is well developed for optical communication systems at 1.33-1.55 lm, and consequently, there has been much effort dedicated towards extending the wavelength of InP based light sources out beyond 2 lm using InGaAs/InAlAs type I and InGaAs/GaAsSb, GaInAs/GaAsSb type II quantum well (QW) structures.…”