Electroluminescence of In_0.53Ga_0.47As/GaAs_0.5Sb_0.5Type-II Multiple Quantum Well Light-Emitting Diodes Grown on (111)B InP by Molecular Beam Epitaxy

Abstract

In 0:53 Ga 0:47 As/GaAs 0:5 Sb 0:5 type-II multiple-quantum-well (MQW) light-emitting diodes were grown on (111)B InP substrates by molecular beam epitaxy. The peak wavelength of the electroluminescence (EL) was at 2.08 m at 11 K and at 2.28 m at 300 K. It was found that the EL intensity of the type-II MQW diode on (111)B substrates was about one order of magnitude stronger than that on (100) InP substrates, which can be explained by the improved crystal quality of the MQW diode on the (111)B InP substrate.

Electroluminescence of In0.53Ga0.47As0.99N0.01/GaAs0.5Sb0.5 Type-II Quantum Well Light-Emitting Diodes Grown on InP Substrates by Molecular Beam Epitaxy

“…As shown in the figure, the peak wavelength is 2.66 mm, which is much longer than that (2.08 mm) of the InGaAs/GaAsSb type-II quantum well diode on InP substrates previously reported by us. 9) This result indicates that the introduction of nitrogen into the InGaAs layer of the InGaAs/GaAsSb type-II structure grown on InP is very effective in achieving longer wavelength. On the other hand, Fig.…”

“…A similar spectral broadening with increasing injection current was also observed for InGaAs/GaAsSb type-II quantum well diodes. 9) This spectral broadening is probably caused by an increase in the carrier density of the type-II quantum well region. In the case of the type-II quantum well structure, the recombination probability of electrons and holes is relatively low compared with that in the case of the type-I quantum well structure.…”

Optical Characterization of Heavily Sn-Doped GaAs1-xSbx Epilayers Grown by Molecular Beam Epitaxy on (001) GaAs Substrates

“…Ternary GaAs 1Àx Sb x semiconductors have recently attracted much attention as a possible candidate material for optoelectronic devices such as lasers and light emitting diodes in the range of 1.0-1.7 mm. 1,2) In particular, a GaAs 1Àx Sb x (x ¼ 0:49) epilayer lattice-matched to a InP substrate is attractive for application in 1.6 mm infrared devices. 3,4) From the viewpoint of the wider applications of GaAsSb semiconductors, GaAsSb layers grown on GaAs substrates can be applied in data-communication lasers in the 1.3-1.5 mm wavelength range, 5) as well as in heterojunction bipolar transistors (HBT) with a GaAsSb base region.…”

“…1,2) In particular, a GaAs 1Àx Sb x (x ¼ 0:49) epilayer lattice-matched to a InP substrate is attractive for application in 1.6 mm infrared devices. 3,4) From the viewpoint of the wider applications of GaAsSb semiconductors, GaAsSb layers grown on GaAs substrates can be applied in data-communication lasers in the 1.3-1.5 mm wavelength range, 5) as well as in heterojunction bipolar transistors (HBT) with a GaAsSb base region. 6,7) In general, in III-V A V B -type alloyed crystals like GaAs 1Àx Sb x , the compositional control of V A and V B is more difficult than it is in III A III B -V-type alloys; therefore, the control of the doping of III-V A -V B alloys is much more difficult.…”