Electroluminescence of a cubic GaN/GaAs (001) p–n junction

As, D. J.; Richter, A. G.; Busch, John D.; Lübbers, M.; Mimkes, Jürgen; Lischka, K.

doi:10.1063/1.125640

Cited by 61 publications

(29 citation statements)

References 20 publications

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“…The growth of cubic GaN layers with excellent structural, optical and electrical properties (as demonstrated by the observation of optically stimulated emission at room temperature from cleaved c-GaN layers [91] and electroluminescence from a MBE grown c-GaN p-n junction [85]) has clearly demonstrated the potential of III-nitrides with cubic crystal structure for the realization of optoelectronic devices like light-emitting diodes and laser diodes. However, the bulk of experience accumulated with hexagonal III-nitrides shows that all working devices contain InGaN in the active region.…”

Section: Mbe Of Cubic Inganmentioning

confidence: 98%

“…A diode fabricated by Mg and Si doping of MBE-grown c-GaN on n-type GaAs (001) has been reported by As et al [85] .Current-voltage (I-V), capacitance-voltage (C-V), photoluminescence (PL) and electroluminescence (EL) measurements were used to characterize the c-GaN p-n homojunction at room temperature. The cubic GaN p-n homojunction structure consisted of a 760 nm thick p-type GaN:Mg on top of a 500 nm thick n-type GaN:Si.…”

Section: Light Emitting Diodesmentioning

confidence: 99%

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Molecular beam epitaxy of cubic III‐nitrides on GaAs substrates

Schikora

Lischka

2003

phys. stat. sol. (c)

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Molecular beam epitaxy has successfully been used to grow crystalline layers of group III-nitrides (GaN, AlN and InN) with cubic (zinc-blende) structure on GaAs substrates. In this article, we discuss these efforts that, despite inherent difficulties due to the metastability of the c-III nitrides, led to substantial improvements of the structural, electrical and optical quality of these wide gap semiconductors. We review experimental work concerned with the epitaxy of c-GaN and the control of the growth process in-situ, the important issue of p-and n-type doping of c-GaN and investigations of the structural and optical properties of c-InGaN and c-AlGaN.

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Section: Mbe Of Cubic Inganmentioning

confidence: 98%

Section: Light Emitting Diodesmentioning

confidence: 99%

Molecular beam epitaxy of cubic III‐nitrides on GaAs substrates

Schikora

Lischka

2003

phys. stat. sol. (c)

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“…Also the slightly less stable cubic polytype of GaN seems a promising material for laser applications, but device technology is still at a very early stage. However, first light-emitting diodes based on cubic GaN have been constructed [3,4]. Dislocations, emerging in high densities in most GaN growth processes, can induce electronic states deep in the band-gap.…”

Section: Introductionmentioning

confidence: 99%

A theoretical investigation of dislocations in cubic and hexagonal gallium nitride

Blumenau

Fall

Elsner

et al. 2003

phys. stat. sol. (c)

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In this article we review our theoretical work on dislocations in GaN. The methods applied are two distinct approximations to density functional theory: Density functional based tight-binding total energy calculations allow the prediction of low energy core structures and energies of extended defects embedded in larger regions of perfect material. However, whenever less approximate electronic structure calculations are required they are obtained in a localised basis pseudopotential approach. © 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

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“…In the literature, cubic phase GaN has first been realized via direct deposition on cubic phase substrates such GaAs [5], 3C-SiC [6], Si (100) [7], and MgO [8]. However, such direct deposition on non-native substrates suffers from high defectivity, structural metastability (i.e.…”

Section: Introductionmentioning

confidence: 99%

Polarization-free integrated gallium-nitride photonics

Bayram

Liu

2017

SPIE Proceedings

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Gallium Nitride (GaN) materials are the backbone of emerging solid state lighting. To date, GaN research has been primarily focused on hexagonal phase devices due to the natural crystallization. This approach limits the output power and efficiency of LEDs, particularly in the green spectrum. However, GaN can also be engineered to be in cubic phase. Cubic GaN has a lower bandgap (~200 meV) than hexagonal GaN that enables green LEDs much easily. Besides, cubic GaN has more isotropic properties (smaller effective masses, higher carrier mobility, higher doping efficiency, and higher optical gain than hexagonal GaN), and cleavage planes. Due to phase instability, however, cubic phase materials and devices have remained mostly unexplored. Here we review a new method of cubic phase GaN generation: Hexagonal-to-cubic phase transition, based on novel nano-patterning. We report a new crystallographic modelling of this hexagonal-to-cubic phase transition and systematically study the effects of nano-patterning on the GaN phase transition via transmission electron microscopy and electron backscatter diffraction experiments. In summary, silicon-integrated cubic phase GaN light emitters offer a unique opportunity for exploration in next generation photonics.

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Electroluminescence of a cubic GaN/GaAs (001) p–n junction

Cited by 61 publications

References 20 publications

Molecular beam epitaxy of cubic III‐nitrides on GaAs substrates

Molecular beam epitaxy of cubic III‐nitrides on GaAs substrates

A theoretical investigation of dislocations in cubic and hexagonal gallium nitride

Polarization-free integrated gallium-nitride photonics

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