The atomic structures, electrical properties, and line energies for threading screw and threading edge dislocations of wurtzite GaN are calculated within the local-density approximation. Both dislocations are electrically inactive with a band gap free from deep levels. These results are understood to arise from relaxed core structures which are similar to (1010) surfaces. [S0031-9007(97)
The structure and electronic activity of several types of
dislocations in both hexagonal and cubic GaN are calculated using
first-principles methods. Most of the stoichiometric dislocations
investigated in hexagonal GaN do not induce deep acceptor states and
thus cannot be responsible for the yellow luminescence. However, it
is shown that electrically active point defects, in particular
gallium vacancies and oxygen-related defect complexes, can be
trapped at the stress field of the dislocations and may be
responsible for this luminescence. For cubic GaN, we find the ideal
stoichiometric 60° dislocation to be electrically active
and the glide set to be more stable than the shuffle. The dissociation
of the latter is considered.
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