Deep acceptors trapped at threading-edge dislocations in GaN

Elsner, J.; Jones, R.; Heggie, M. I.; Sitch, P.; Haugk, M.; Frauenheim, Th.; Öberg, Sven; Briddon, P.R.

doi:10.1103/physrevb.58.12571

Cited by 301 publications

(203 citation statements)

References 22 publications

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“…12 The results for the thinnest 2.6 m sample are, of course, discouraging in that sense because they break this nice correlation and suggest that the density of traps is sensitive not only to the dislocation density but also to some other factors. However, similar measurements on MOCVD and HVPE samples with dislocation densities over 10 9 cm Ϫ2 gave for such states an overall density of about 2ϫ10 16 cm Ϫ3 , in agreement with the general trend presented by Fig. 1 and Table I.…”

Section: Fig 2 1/csupporting

confidence: 78%

Deep hole traps in n-GaN films grown by hydride vapor phase epitaxy

Polyakov

Smirnov

Говорков

et al. 2002

Journal of Applied Physics

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Concentrations of deep hole traps were measured in a set of hydride vapor phase epitaxy grown samples with thicknesses varying from 2.6 to 68 m. Results were obtained from low temperature capacitance-voltage measurements before and after illumination and from deep level transient spectroscopy measurements with optical injection ͑ODLTS͒. The former revealed the presence of high densities ͑ϳ10 15 to 10 16 cm Ϫ3 ͒ of hole traps whose concentration decreased with sample thickness in a manner similar to that found for the dislocation density. Capacitance versus temperature measurements in the dark and after illumination suggested that these traps form a band of states rather than a single level in the GaN band gap. It is suggested that such states could be associated with dislocations. The main hole traps observed by ODLTS were deep hole traps, of energy near E v ϩ0.9 eV. Their density was also observed to substantially decrease with sample thickness.

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Section: Fig 2 1/csupporting

confidence: 78%

Deep hole traps in n-GaN films grown by hydride vapor phase epitaxy

Polyakov

Smirnov

Говорков

et al. 2002

Journal of Applied Physics

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“…Recent positron annihilation studies of GaN films indicate that certain defects that are incorporated with gallium vacancies (V Ga) , including V Gadefect complexes, are non-radiative recombination centers that effectively limit room-temperature photoluminescence efficiencies [16]. These studies also suggest a correlation between V Ga populations and TD density; a correlation consistent with theoretical predictions that the formation energies of V Ga and V Ga -O N (an oxygen impurity occupying a nitrogen site next to a gallium vacancy) complexes are reduced in the local strain fields near TDs [22].…”

Section: Point Defectssupporting

confidence: 66%

Research challenges to ultra‐efficient inorganic solid‐state lighting

Phillips¹,

Coltrin

Crawford

et al. 2007

Laser & Photonics Reviews

368

267

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Solid-state lighting is a rapidly evolving, emerging technology whose efficiency of conversion of electricity to visible white light is likely to approach 50% within the next several years. This efficiency is significantly higher than that of traditional lighting technologies, giving solid-state lighting the potential to enable significant reduction in the rate of world energy consumption. Further, there is no fundamental physical reason why efficiencies well beyond 50% could not be achieved, which could enable even more significant reduction in world energy usage. In this article, we discuss in some detail: (a) the several approaches to inorganic solid-state lighting that could conceivably achieve "ultra-high," 70% or greater, efficiency, and (b) the significant research questions and challenges that would need to be addressed if one or more of these approaches were to be realized.

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“…2 Studies have shown that TDs in GaN are electrically active and detrimental to carrier transport in emission properties of semiconductor heterostructures. [3][4][5][6][7][8] Therefore, there is a strong need to get bulk GaN material for homoepitaxial growth of device structures with low TDD.…”

Section: Introductionmentioning

confidence: 99%

Curvature and bow of bulk GaN substrates

Foronda

Романов

Young

et al. 2016

Journal of Applied Physics

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We investigate the bow of free standing (0001) oriented hydride vapor phase epitaxy grown GaN substrates and demonstrate that their curvature is consistent with a compressive to tensile stress gradient (bottom to top) present in the substrates. The origin of the stress gradient and the curvature is attributed to the correlated inclination of edge threading dislocation (TD) lines away from the [0001] direction. A model is proposed and a relation is derived for bulk GaN substrate curvature dependence on the inclination angle and the density of TDs. The model is used to analyze the curvature for commercially available GaN substrates as determined by high resolution x-ray diffraction. The results show a close correlation between the experimentally determined parameters and those predicted from theoretical model.

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Deep acceptors trapped at threading-edge dislocations in GaN

Cited by 301 publications

References 22 publications

Deep hole traps in n-GaN films grown by hydride vapor phase epitaxy

Deep hole traps in n-GaN films grown by hydride vapor phase epitaxy

Research challenges to ultra‐efficient inorganic solid‐state lighting

Curvature and bow of bulk GaN substrates

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