Electroluminescence and Avalanche Multiplication at Electric Field Strength Exceeding 1 MV/cm in Hydrogenated Amorphous SiC Alloy

Abstract

Studies of micro-cutting have so far largely been carried out on single-phase materials. Due to the size effect, the workpiece material microstructure can have a significant influence on the cutting force, chip formation and surface quality. Previous investigations have shown that hard particles in materials such as aluminum alloy can play a significant role in the generation of defects such as cracks and voids on the work surface. This paper will examine the extent of the problem during the micro-cutting of Al6061 T6 and propose how it can be mitigated.

High electric field response of wide bandgap a-Si:H photodiodes probed by transient current measurements

“…Therefore alternative material has been sought such as hydrogenated amorphous silicon (aSi:H). However, typical bandgap of device-quality aSi:H (E g $ 1:75 eV) is not enough to apply an electric field required for avalanche multiplication (>10 6 V/cm) [2,3] because the bandgap value is too small to suppress leak current due to thermally-excited carriers. Also there is a report that the avalanche multiplication unlikely occur in a-Si:H since hot-carriers are cooled in a very short time $0.2 ps [4].…”