Electrodeposition of p+, p, i, n and n+-type copper indium gallium diselenide for development of multilayer thin film solar cells

Chaure, Nandu B.; Samantilleke, A. P.; Burton, R.P.; Young, James S.; Dharmadasa, I. M.

doi:10.1016/j.tsf.2004.07.051

Cited by 57 publications

(45 citation statements)

References 5 publications

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“…Without any complexing agents and supporting electrolytes, Chaure et al reported the possibility to electrodeposit CISe (p, i, and n-type) [67] and CIGSe (p + , p, i, n, and n + ) [68] by varying the deposition potential from the same bath. The major hindrance in using the aqueous electrolytes is the abrupt changes in the (Ga/III) ratio, as even for a slight change in the deposition, potential can alter the composition and thus the deposition mechanism [69].…”

Section: Experimental Concerns In Cigse Electrodepositionmentioning

confidence: 99%

A short review on the advancements in electroplating of CuInGaSe2 thin films

Chandran

Panda

Mallik

2018

Mater Renew Sustain Energy

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Thin-film solar cell devices based on copper indium gallium diselenide (CIGSe) chalcogenide materials fabricated by vacuum-based deposition techniques have already achieved lab scale efficiency beyond 21%. For industrial-scale applications, non-vacuum deposition technique such as electrodeposition and screen printing is considered to be suitable approaches for reducing the device fabrication cost. Moreover, electrodeposition has the potential to prepare large area thin films as it requires cheap raw material sources and equipment capital. Hence, it is imperative to understand the current status and advancements in the electroplating techniques of the CIGSe thin films. This article reviews on the experimental advances in electroplating of ternary CuInSe 2 and quaternary CIGSe. Various approaches in electrodeposition, influential experimental parameters, and the deposition mechanisms which are related to the final cell efficiency are discussed in detail.

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Section: Experimental Concerns In Cigse Electrodepositionmentioning

confidence: 99%

A short review on the advancements in electroplating of CuInGaSe2 thin films

Chandran

Panda

Mallik

2018

Mater Renew Sustain Energy

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“…The difference between the measured voltages under illuminated (V L ) and dark (V D ) conditions at constant time duration gives the electrical conductivity type of the layer and the magnitude of the signal indicates the suitability of doping concentration of the semiconducting layer for fabricating electronic devices. 12 The direct current (DC) conductivity measurement was performed to determine the electrical conductivity of the CdTe:Ga layers using Rera solution fully automated I-V measurement system.…”

Section: Experimental Techniques Usedmentioning

confidence: 99%

Effect of Gallium Doping on the Characteristic Properties of Polycrystalline Cadmium Telluride Thin Film

Ojo

Dharmadasa

2017

Journal of Elec Materi

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Ga-doped CdTe polycrystalline thin films were successfully electrodeposited on glass/fluorine doped tin oxide substrates from aqueous electrolytes containing cadmium nitrate (Cd(NO 3 ) 2 AE4H 2 O) and tellurium oxide (TeO 2 ). The effects of different Ga-doping concentrations on the CdTe:Ga coupled with different post-growth treatments were studied by analysing the structural, optical, morphological and electronic properties of the deposited layers using x-ray diffraction (XRD), ultraviolet-visible spectrophotometry, scanning electron microscopy, photoelectrochemical cell measurement and direct-current conductivity test respectively. XRD results show diminishing (111)C CdTe peak above 20 ppm Ga-doping and the appearance of (301)M GaTe diffraction above 50 ppm Ga-doping indicating the formation of two phases; CdTe and GaTe. Although, reductions in the absorption edge slopes were observed above 20 ppm Ga-doping for the as-deposited CdTe:Ga layer, no obvious influence on the energy gap of CdTe films with Ga-doping were detected. Morphologically, reductions in grain size were observed at 50 ppm Ga-doping and above with high pinhole density within the layer. For the as-deposited CdTe:Ga layers, conduction type change from n-to p-were observed at 50 ppm, while the n-type conductivity were retained after post-growth treatment. Highest conductivity was observed at 20 ppm Ga-doping of CdTe. These results are systematically reported in this paper.

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“…Electrodeposition method has been successfully used for the deposition of elemental, binary, ternary and quaternary compounds [9][10][11][12]. In general, two procedures have been employed to deposit CIS layers, first, the co-deposition of Cu-In-Se [13] and other is deposition of Cu-In alloy and subsequent selenization [14]. One-step electrochemical method may offer a convenient way to deposit all the elements together at desirable growth potential which potentially lead to produce the stoichiometric CIS thin films [15].…”

Section: Introductionmentioning

confidence: 99%

Study of electrochemically grown copper indium diselenide (CIS) thin films for photovoltaic applications

Rohom

Londhe

Bhand

et al. 2016

J Mater Sci: Mater Electron

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CIS thin films have been grown electrochemically from an aqueous electrolyte at room temperature on fluorine doped tin oxide coated glass substrate at different deposition potentials ranging from -0.7 to -1.0 V versus Ag/AgCl reference electrode. Cyclic voltammetry was studied at slow scan rate to optimize the deposition potential. The thin film samples were selenized in a tubular furnace at 400°C for 20 min. X-ray diffraction and Raman analysis was used to study the structural properties. Optical absorption, scanning electron microscopy and energy dispersive X-ray analysis (EDAX) have been used to investigate the band-gap, surface morphology and compositional analysis. Electrical properties were studied with the help of current-voltage measurements. Conductivity type for CIS thin films was studied by using photo-electrochemical study. The prominent reflections (112), (204/220) and (312/ 116) of tetragonal chalcopyrite CIS have been revealed for all as-grown and selenized samples. The energy band gap of the selenized CIS thin film deposited at various deposition potentials was found to be *1.03 to 1.24 eV. Granular, uniform and void free surface was observed in as-prepared sample, while large clusters were noticed in selenized samples. EDAX results reveal that the stoichiometric CIS thin film are deposited -0.8 V, however, Curich and In-rich CIS layers were grown at lower and higher cathodic deposition potentials, deviated from -0.8 V. The values ideality factor (g) calculated from I-V measurements were found to be decreased upon selenization. The Raman spectra of stoichiometric CIS thin film shows dominant A1 mode with spectral features sensitive to the microcrystalline quality of the layers. A ordered defect compound layer and secondary phases of CuSe are observed in In-rich and Cu-rich CIS layers, respectively.

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Electrodeposition of p+, p, i, n and n+-type copper indium gallium diselenide for development of multilayer thin film solar cells

Cited by 57 publications

References 5 publications

A short review on the advancements in electroplating of CuInGaSe2 thin films

A short review on the advancements in electroplating of CuInGaSe2 thin films

Effect of Gallium Doping on the Characteristic Properties of Polycrystalline Cadmium Telluride Thin Film

Study of electrochemically grown copper indium diselenide (CIS) thin films for photovoltaic applications

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