Electrodeposited layers of CuInS2, CuIn5S8 and CuInSe2

Hodes, Gary; Engelhard, Tina; Herrington, C. R.; Kazmerski, Lawrence L.

doi:10.1016/0146-3535(84)90054-6

Cited by 18 publications

(6 citation statements)

References 9 publications

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“…With decreasing [Cu]/[In] ratio up to 0.28, the signal from this secondary phase decreases and finally disappears, which indicates that the chalcopyrite phases may play an important promotion role in the formation of CuIn 5 S 8 via electrodeposition technique. This result is almost in agreement with that observed by Hodes et al [29], which have indicated that CuIn 5 S 8 spinel phase starts to be formed and mixed with some chalcopyrite when the Cu/In ratio is made less than 0.5. For sample deposited from molar ratio of ([Cu]/ [In] = 0.28), XRD pattern shows only the peaks associated to the CuIn 5 S 8 cubic spinel phase, indicating that the crystalline nature of the CuIn 5 S 8 improves at this corresponding molar ratio.…”

Section: Electrochemical Measurementssupporting

confidence: 94%

Experimental investigation of the effect of indium content on the CuIn5S8 electrodes using electrochemical impedance spectroscopy

Gannouni

Assaker

Chtourou

2015

Materials Research Bulletin

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Section: Electrochemical Measurementssupporting

confidence: 94%

Experimental investigation of the effect of indium content on the CuIn5S8 electrodes using electrochemical impedance spectroscopy

Gannouni

Assaker

Chtourou

2015

Materials Research Bulletin

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“…The classic methodology is coelectrodeposition, described for CdTe deposition in work by Kröger et al The coelectrodeposition process is low-cost and simple, given the right solution chemistry. Many binary compounds have been formed using coelectrodeposition at a controlled potential or current in a single solution containing precursors for both elements. − One of the drawbacks to coelectrodeposition is limited control over the process. The potential must be carefully controlled, within a few millivolts.…”

Section: Introductionmentioning

confidence: 99%

Potential Pulse Atomic Layer Deposition of Cu₂Se

Perdue

Stickney

2016

Chem. Mater.

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Crystalline thin films of cuprous selenide (Cu2Se) were electrodeposited at room temperature from an aqueous solution containing elemental precursors for Cu and Se, using a potential pulse version of atomic layer deposition. Cyclic voltammetry was used to estimate Anodic and Cathodic cycle potentials for the formation of Cu2Se, which were then examined to systematically optimize the cycle. Electron probe microanalysis was used to follow the Cu/Se atomic ratios as a function of the cycle parameters, and X-ray diffraction was used to investigate deposit structure: polycrystalline orthorhombic Cu2Se, with some cubic. Film thicknesses, from spectroscopic ellipsometry, were shown to be proportional to the number of cycles performed (0.02 nm/cycle), and scanning electron microscopy suggested that the deposits were consistent with layer-by-layer growth as a function of the number of cycles.

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“…[ 47,48 ] ED can serve either to directly deposit the compound semiconductors CuInSe 2 or CuInS 2 [49][50][51] or to electroplate metallic Cu-In or Cu-In-Ga precursors. [52][53][54] In the case of metallic precursors, an annealing step at temperatures between 500 and 600 °C is used to react the precursor with chalcogens (S, Se) to form the semiconductor phase. In the case where all the precursor elements (Cu-In-Se-S) are already deposited by ED, the annealing is still mandatory to enable grain growth and improve layer crystallinity.…”

Section: Cigsmentioning

confidence: 99%

All Solution‐Processed Chalcogenide Solar Cells – from Single Functional Layers Towards a 13.8% Efficient CIGS Device

Romanyuk

Hagendorfer

Stücheli

et al. 2014

Adv Funct Materials

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Solution processing of inorganic thin fi lms has become an important thrust in material research community because it offers low-cost and high-throughput deposition of various functional coatings and devices. Especially inorganic thin fi lm solar cells -macroelectronic devices that rely on consecutive deposition of layers on large-area rigid and fl exible substrates -could benefi t from solution approaches in order to realize their low-cost nature. This article critically reviews existing deposition approaches of functional layers for chalcogenide solar cells with an extension to other thin fi lm technologies. Only true solutions of readily available metal salts in appropriate solvents are considered without the need of pre-fabricated nanoparticles. By combining three promising approaches, an air-stable Cu(In,Ga)Se 2 thin fi lm solar cell with effi ciency of 13.8% is demonstrated where all constituent layers (except the metal back contact) are processed from solutions. Notably, water is employed as the solvent in all steps, highlighting the potential for safe manufacturing with high utilization rates. remarkable improvements in conversion effi ciency. [ 1 ] The highest effi ciency of 21.0% has been achieved for two thin fi lm technologies so far: Cu(In,Ga)Se 2 (CIGS) [ 2 ] and CdTe. [ 3 ] Remarkably, both CIGS and CdTe records are exceeding the highest value of 20.4% for the market leading polycrystalline silicon wafer technology. Kesterite Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cells are often considered as low-cost alternatives to CIGS and CdTe because they consist of only earth-abundant and nontoxic elements although the effi ciency is currently limited to 12.6% (12.7% not certifi ed). [ 4 ] Well-established dye-sensitized solar cell (DSSC) and amorphous silicon (a-Si) technology peak at 12.3% and 13.4%, respectively. [ 1 ] The most recent boom in TFPV -organometallic halide perovskite cells -has shown an incredible spurt by advancing effi ciency from below 5% to 17.9%(!) within just 3 years. [ 5 ] On the border to classical TFSC is the thin crystalline silicon technology that employs liftoff of 50-micrometer-thick Si wafers to yield up to 21.2%-efficient solar cells. [ 6 ] These massive research and development efforts in the fi eld of TFSC clearly refl ect their commercial value for manufacturing inexpensive effi cient solar modules -rigid or fl exible. Functional layers for the high effi ciency devices are deposited mostly in a batch-to-batch manner using vacuum-based methods such as evaporation, sputtering, or chemical vapor deposition. For example, Figure 1 exhibits a cross-section of a >20% effi cient CIGS solar cell in the so-called substrate confi guration, where 5 out of 6 functional layers are deposited by evaporation or sputtering. In this respect, non-vacuum deposition methods are often promoted as alternative approaches to reduce capital investment costs, offer fast roll-to-roll (R2R) processing and eventually reduce the PV module prices. Particularly desirable among non-vacuum approaches are solutionb...

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Electrodeposited layers of CuInS2, CuIn5S8 and CuInSe2

Cited by 18 publications

References 9 publications

Experimental investigation of the effect of indium content on the CuIn5S8 electrodes using electrochemical impedance spectroscopy

Experimental investigation of the effect of indium content on the CuIn5S8 electrodes using electrochemical impedance spectroscopy

Potential Pulse Atomic Layer Deposition of Cu₂Se

All Solution‐Processed Chalcogenide Solar Cells – from Single Functional Layers Towards a 13.8% Efficient CIGS Device

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Electrodeposited layers of CuInS2, CuIn5S8 and CuInSe2

Cited by 18 publications

References 9 publications

Experimental investigation of the effect of indium content on the CuIn5S8 electrodes using electrochemical impedance spectroscopy

Experimental investigation of the effect of indium content on the CuIn5S8 electrodes using electrochemical impedance spectroscopy

Potential Pulse Atomic Layer Deposition of Cu2Se

All Solution‐Processed Chalcogenide Solar Cells – from Single Functional Layers Towards a 13.8% Efficient CIGS Device

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Potential Pulse Atomic Layer Deposition of Cu₂Se