Potential Pulse Atomic Layer Deposition of Cu<sub>2</sub>Se

Perdue, Brian; Stickney, John L.

doi:10.1021/acs.chemmater.5b04211

Cited by 11 publications

(10 citation statements)

References 68 publications

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“…This feature was not observed, however, when only purified 1 mM Na 2 SeO 4 (dashed black, Panel A) or 1.2 mM Cu(ClO 4 ) 2 (magenta, Panel A) were individually added to 0.1 M HClO 4 , even for t hold = 1000 s. Inspection of the data revealed an increase in the magnitude of the peak with t hold , or decreases in E hold , consistent with a potential dependent, kinetically controlled reduction process. Similar oxidation features were reported on Au(poly) following reduction of SeO 3 2− from Cu(II)-containing solutions and assigned to the stripping of Cu from one or more forms of copper selenide (peaks below 0.7 V), 16,17 leaving behind adsorbed Se, which is then oxidized at 1.15 V yielding adsorbed SeO 3 2− as discussed before. 10 It may be concluded that UPD Cu promotes the reduction of SeO 4 2− to yield Cu x Se and that the features below 0.7 V can be assigned to the stripping of Cu from this layer to yield elemental Se.…”

Section: Resultssupporting

confidence: 78%

Communication—The Reduction of Selenate Mediated by Underpotential Deposited Copper on Gold Electrodes in Acidic Solutions: Analytical Applications

Strobl

Scherson

2016

J. Electrochem. Soc.

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Voltammetric techniques have been employed to show that underpotential deposited Cu on polycrystalline Au electrodes in aqueous 0.1 M HClO4 catalyzes the reduction of purified selenate, SeO42−, to yield a layer of adsorbed copper selenide, CuxSe. Subsequent oxidation of this layer led to the loss of Cu, leaving behind adsorbed, elemental Se, which could be oxidized to selenite, SeO32−, at higher potentials. Application of this method made it possible to detect SeO42- down to nM levels. Voltammetric features observed on Au(poly) in Cu2+-free 0.1 M HClO4 containing SeO42− reported earlier in the literature could be attributed to the reduction of SeO32− impurities present in the commercial chemical.

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Section: Resultssupporting

confidence: 78%

Communication—The Reduction of Selenate Mediated by Underpotential Deposited Copper on Gold Electrodes in Acidic Solutions: Analytical Applications

Strobl

Scherson

2016

J. Electrochem. Soc.

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“…The ternary compound CIS could be manufactured by sequential PP-ALD of binary selenides, such as In 2 Se 3 and Cu 2 Se. Deposition of Cu 2 Se, using PP-ALD, has recently been reported . In 2 Se 3 is the subject of the present report.…”

Section: Introductionmentioning

confidence: 82%

Electrodeposition of In₂Se₃ Using Potential Pulse Atomic Layer Deposition

Stickney

2016

J. Phys. Chem. C

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Indium(III) selenide, In 2 Se 3 , thin films were electrodeposited at room temperature from an aqueous solution containing ionic precursors for both In and Se, using potential pulse atomic layer deposition (PP-ALD). Cyclic voltammetry was used to determine approximate cycle potentials, and anodic and cathodic potentials were systematically examined to optimize the potential pulse program for In 2 Se 3 . Electron probe microanalysis was used to follow the In:Se atomic ratio as a function of the cycle conditions, and annealing studies were performed on stoichiometric deposits. Film thickness was a function of both the anodic and cathodic potentials. The optimum growth rate was consistent with previous PP-ALD studies in which similar concentrations and pulse times were employed, 0.02 nm/cycle. The use of the potential pulse cycle for film growth resulted in surface-limited control over the deposit stoichiometry each cycle and thus a layer-by-layer growth process.

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“…A vapor-deposited alkanethiol SAM was shown to be more effective than a solution-deposited SAM in blocking ALD, even after only 30s of exposure. The vapor deposition also resulted in a much better thiol-regeneration process facilitating deposition of the SAMs on porous or three-dimensional structures, allowing for the fabrication of next generation electronic devices [41].…”

Section: Experimental Validationsmentioning

confidence: 99%

Electrochemical Atomic Layer Deposition (EC-ALD) Low Cost Synthesis of Engineered Materials a Short Review

2018

AMSE

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Having mastered the technology of epitaxial deposition of crystalline thin films (i.e. homo and heteroepitaxy) on crystalline substrates has already been found providing better device designs with numerous advantages in the development of microelectronics devices and circuits. Consequently, mass-scale production of epitaxial thin films could successfully be developed and used in fabricating discrete devices and integrated circuits (ICs) using silicon/compound semiconductors commercially. Especially, realizing the hetero-epitaxial interfaces possessing two-dimensional electron/hole gas (2DEG/2DHG) sheets could offer very-high electron/hole mobilities for producing high-electronmobility transistors (HEMTs) and amplifiers for microwave/millimeter-wave communication systems. However, the major limitation of this technology was its requirement of extremely high cost infrastructures. Subsequently, the rising demands of the technologies to produce large-size displays/electronics systems, and large-numbers of sensors/ actuators in Internet of Thing (IoT) made it imminent for the researchers to explore replacing the existing cost intensive technologies by more affordable ones. In such an endeavor, developing a simpler and alternate epitaxial technology became imminent to look for. Incidentally, electrodeposition based epitaxy attracted the attention of the researchers by employing potentiostatic set-up for understanding the growth kinetics of the ionic species involved. While going through these studies, starting with the deposition of metallic/semiconducting thin films, atomic-layer epitaxial depositions could be successfully made and named as electrochemical atomic layer deposition (EC-ALD). Despite numerous attempts made for almost two decades in this fascinating field the related technology is not yet ready for its commercial exploitations. Some of the salient features of this process (i.e. commonly known as EC-ALD or EC-ALE) are examined here with recent results along with future prospects. Indexing Terms: Vapor Phase Epitaxy (VPE), Liquid Phase Epitaxy (LPE), Atomic Layer Deposition, Atomic Layer Epitaxy (ALE), and Molecular Beam Epitaxy (MBE); Electrochemical Atomic Layer Deposition (EC-ALD)

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Potential Pulse Atomic Layer Deposition of Cu₂Se

Cited by 11 publications

References 68 publications

Communication—The Reduction of Selenate Mediated by Underpotential Deposited Copper on Gold Electrodes in Acidic Solutions: Analytical Applications

Communication—The Reduction of Selenate Mediated by Underpotential Deposited Copper on Gold Electrodes in Acidic Solutions: Analytical Applications

Electrodeposition of In₂Se₃ Using Potential Pulse Atomic Layer Deposition

Electrochemical Atomic Layer Deposition (EC-ALD) Low Cost Synthesis of Engineered Materials a Short Review

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Potential Pulse Atomic Layer Deposition of Cu2Se

Cited by 11 publications

References 68 publications

Communication—The Reduction of Selenate Mediated by Underpotential Deposited Copper on Gold Electrodes in Acidic Solutions: Analytical Applications

Communication—The Reduction of Selenate Mediated by Underpotential Deposited Copper on Gold Electrodes in Acidic Solutions: Analytical Applications

Electrodeposition of In2Se3 Using Potential Pulse Atomic Layer Deposition

Electrochemical Atomic Layer Deposition (EC-ALD) Low Cost Synthesis of Engineered Materials a Short Review

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Potential Pulse Atomic Layer Deposition of Cu₂Se

Electrodeposition of In₂Se₃ Using Potential Pulse Atomic Layer Deposition