Electrodeposited Cu Film Morphology on Thin PVD Cu Seed Layers

Kelly, James; Lin, Xuan; Nogami, Takeshi; Straten, O. van der; Demarest, J.; Li, Juntao; Murphy, Richard J.; Zhang, Xunyuan; Penny, C.; Parks, C.; DeHaven, Patrick W.; Madan, A.; Edelstein, D.

doi:10.1149/05817.0017ecst

Cited by 2 publications

(2 citation statements)

References 18 publications

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“…Since, as stated earlier, passive oxide and hydroxide films are formed on metals at higher pH values and their inertness can increase with pH, 10,11 we repeated the measurements at pH 11. The E corr values changed considerably and, in most cases for the better.…”

Section: Resultsmentioning

confidence: 99%

“…The thickness of the Co films plays a significant role on their behavior during processing. Indeed, the performance of thinner films (<5 nm) can be influenced by the underlying substrate 11,12 and can be very different from that of the bulk material or even thicker films. Mechanical/structural properties of various materials including Ag, Cu, Ni, Au, and diamond films have been shown to depend on film thickness and associated grain size and crystalline morphology and the underlying substrate, especially when the film thickness is below 100 nm or so.…”

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confidence: 99%

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Cleaning Solutions for Ultrathin Co Barriers for Advanced Technology Nodes

Alety

Lagudu

Popuri

et al. 2017

ECS J. Solid State Sci. Technol.

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Co, a candidate material for barrier and capping layers in 10 nm and smaller Cu interconnects, is prone to corrosion and galvanic corrosion during chemical mechanical planarization (CMP) and wet cleaning in aqueous environments posing a serious challenge to its use since the Co liner in the advanced nodes is desired to be only ∼2 to 3 nm thick. We show that E corr between Cu and Co (2 nm) films can be reduced to <10 mV, with Cu being more noble, in an aqueous solution of 6.6 mM (0.05 wt%) Glycine + 15 mM 1,2,4 Triazole, while maintaining an excellent surface finish making it an excellent cleaning solution for Cu/Co (2 nm) structures. We also show that such thin Co films behave electrochemically very differently from thicker (physical vapor deposited 200 nm and even 20 nm) films, perhaps due to differences in deposition methods, differences in surface interactions as determined by XPS and in grain sizes as revealed by SEM imaging, and that (post-CMP) cleaning solutions available for the thicker films do not work for them.

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Section: Resultsmentioning

confidence: 99%

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confidence: 99%