Removing overhang and increasing atom re-deposition of sputtering to enable gap-filling scalability

Ren, Wanchun; Liu, Bo; Bao, Binhao; Zhang, Song

doi:10.1016/j.surfcoat.2018.08.080

Cited by 1 publication

(1 citation statement)

References 27 publications

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“…Moreover, recent studies have disclosed that PCM may not fully fill nanosized active regions initially due to void and overhang generated after deposition. [ 58 , 59 , 60 ] Thus, in this work, the interest is in the utilization of PC systems in different as‐fabricated states/conditions as the entropy source for PUF design.…”

Section: Resultsmentioning

confidence: 99%

Ultrafast Near‐Ideal Phase‐Change Memristive Physical Unclonable Functions Driven by Amorphous State Variations

Wang

Lim

et al. 2022

Advanced Science

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There is an ever-increasing demand for next-generation devices that do not require passwords and are impervious to cloning. For traditional hardware security solutions in edge computing devices, inherent limitations are addressed by physical unclonable functions (PUF). However, realizing efficient roots of trust for resource constrained hardware remains extremely challenging, despite excellent demonstrations with conventional silicon circuits and archetypal oxide memristor-based crossbars. An attractive, down-scalable approach to design efficient cryptographic hardware is to harness memristive materials with a large-degree-of-randomness in materials state variations, but this strategy is still not well understood. Here, the utilization of high-degree-of-randomness amorphous (A) state variations associated with different operating conditions via thermal fluctuation effects is demonstrated, as well as an integrated framework for in memory computing and next generation security primitives, viz.

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Section: Resultsmentioning

confidence: 99%