2010
DOI: 10.1016/j.electacta.2010.02.015
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Electrochemical synthesis of CdS nanowires by underpotential deposition in anodic alumina membrane templates

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Cited by 22 publications
(13 citation statements)
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“…At present, the main points of control are solution composition and the deposition potential. Recently, we have reported codeposition of Bi 2 Te 3−y Se y , CdS, Bi 1−x Sb x , and Bi 2−x Sb x Te 3 under the conditions of UPD or OPD [14][15][16]. To the best of our knowledge, there is no report on the electrodeposition of Bi 2−x Sb x Se 3 thin films.…”
Section: Introductionmentioning
confidence: 90%
“…At present, the main points of control are solution composition and the deposition potential. Recently, we have reported codeposition of Bi 2 Te 3−y Se y , CdS, Bi 1−x Sb x , and Bi 2−x Sb x Te 3 under the conditions of UPD or OPD [14][15][16]. To the best of our knowledge, there is no report on the electrodeposition of Bi 2−x Sb x Se 3 thin films.…”
Section: Introductionmentioning
confidence: 90%
“…Especially, for their fascinating properties and potential applications in the field of nanoscale science, one-dimensional (1D) heterostructures including coaxial core-shell, axially modulated, and alloyed nanowires are been particular interested [4][5][6][7][8][9][10]. CdS (E g = 2.42 eV at room temperature) and ZnO (E g = 3.2 eV at room temperature) are important wide band gap II-VI semiconductor materials, which attract much attention because of their unique properties and wide range of applications in sensors, lasers, waveguides, photocatalysts, and optoelectronic devices [11][12][13][14][15][16][17][18]. On account of this, compositional control has been applied in ZnO-included heterostructures to improve the efficiency connected with photogenerated electrons and holes or incorporate new properties [19][20][21][22][23].…”
Section: Introductionmentioning
confidence: 99%
“…As a classic I-IV group semiconductor, one-dimensional (1D) CdS nanowires have been excellent candidates for nano-based electronic and optoelectronic applications for nanogenerators, waveguides, photoconductors, logic gates, field emitters, solar cells and thermoelectronics because of the direct band gap of 2.4 eV, the quantum confined electron energy state and high surface-tovolume ratio [1][2][3][4][5][6][7][8][9][10][11]. CdS nanowires usually exhibit both near band edge (NBE) emission and deep level (DL) emission.…”
Section: Introductionmentioning
confidence: 99%