Structural, morphological and optical properties of Bi2−xSbxSe3 thin films grown by electrodeposition

Şişman, İlkay; Biçer, Mustafa

doi:10.1016/j.jallcom.2010.10.165

Cited by 20 publications

(1 citation statement)

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“…where hν is the photon energy, E g is the bandgap energy and A is a proportionality constant which is related to the effective masses As observed in Figure 7, the value of absorption coefficient (α) is larger than 10 5 cm −1 in the visible region, which supports the direct bandgap nature of semiconductor material. 32,33 Based on the allowed direct interband transition, the optical bandgap is estimated to be about 1.18 eV by extrapolating the linear portion of the plot relating (αhν) 2 versus hν to (αhν) 2 = 0, as depicted in the inset of Figure 7. In addition, the plot of (αhν) 2 versus hν yields a well straight line.…”

Section: Resultsmentioning

confidence: 99%

Preparation and Characterization of AgSbSe₂Thin Films by Electrodeposition

Liu¹,

Li²,

Yang³

et al. 2013

J. Electrochem. Soc.

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Silver antimony selenide thin films have been prepared by potentiostatical electrodeposition from an aqueous solution followed by rapid thermal annealing. The electrodeposition mechanism was investigated by cyclic voltammetry (CV) test. The most suitable deposition potential for film preparation was determined to be −0.50 V vs. SCE combining with CV, composition and morphology studies. The as-deposited films are amorphous in nature and the amorphous-to-crystalline transition can be obtained by annealing treatment at 300°C. The compositional, morphological, structural and optical properties of the prepared films were studied via energy-dispersive X-ray spectroscopy, environmental scanning electron microscopy, X-ray diffraction and optical absorption tests, respectively. AgSbSe2 thin films with homogeneous morphology and near stoichimetric composition can be obtained. The AgSbSe2 film with cubic structure exhibits high absorption coefficient in the order of 105 cm−1, an optical bandgap of 1.18 eV and good photoelectric property.

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Section: Resultsmentioning

confidence: 99%