Electro-optical investigations of Ovonic chalcogenide memory devices

Mytilineou, E.; Ovshinsky, Stanford R.; Pashmakov, B.; Strand, David; Jablonski, D.G.

doi:10.1016/j.jnoncrysol.2005.09.054

Cited by 19 publications

(15 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…But the results were fascinating. The tiny memory, cognitive, or threshold switching devices responded well with electrical or optical pulses [14,15]. If their properties were optimized they could make VLSI technology much simpler and faster, could be used in an electrical or optical cognitive computer or just used for encryption of data.…”

Section: Oum Memoriesmentioning

confidence: 99%

Memories of a visiting scientist

Mytilineou

2012

Physica Status Solidi (b)

View full text Add to dashboard Cite

show abstract

Section: Oum Memoriesmentioning

confidence: 99%

Memories of a visiting scientist

Mytilineou

2012

Physica Status Solidi (b)

View full text Add to dashboard Cite

show abstract

“…26,27) The chalcogenide alloy in the polycrystalline state shows a drastic increase in free electron density, which gives rise to a difference in resistivity and reflectivity. 4,28) That is the reason why the sheet resistance of AIST films can show a drastic decrease from the amorphous to crystalline state. So far, there were two chalcogenide films utilizing such electrical property in OUM applications: (1) Ge-Sb-Te ternary alloy system, in which the sheet resistivity of amorphous film is around 10 3 -10 4 times compared to that of crystalline one.…”

Section: Electrical Properties Of Aist and St Filmsmentioning

confidence: 99%

“…[2][3][4][5] In practical applications, OUM exhibits a high/low resistance ratio of about 10$100, depending on its programmed states, film structures and material properties. 4,5) A key physical property for OUM applications is the sheet resistance with dependence on different crystalline structures.…”

Section: Introductionmentioning

confidence: 99%

Variation of Microstructure and Electrical Conductivity of Amorphous AgInSbTe and SbTe Films during Crystallization

2007

View full text Add to dashboard Cite

Two kinds of chalcogenide films with similar Sb/Te atomic ratios, AgInSbTe (AIST) and SbTe (ST) were deposited on alkali-free glass using the RF sputtering method. The microstructure characteristics of both ST and AIST films were demonstrated to correlate with the electrical properties. TEM observation and GI-XRD profiles revealed that the structures of as-deposited AIST and ST films were amorphous characteristics. The sheet resistance of the as-deposited AIST films was twice as high as that of ST films and the effect of Ag and In additives was proposed. After annealing at 523 K for 1 h, the sheet resistance of both chalcogenide films decreased by four orders of magnitude due to crystallizations and the sheet resistance of crystallized AIST film was still twice as large as that of crystallized ST film. DSC measurement was used to determine the crystallization temperature of AIST films as 476 K and that of ST films as 445 K. The activation energies of crystallization were determined using Kissinger's method, and 0.94 eV and 0.84 eV were obtained for AIST and ST films, respectively. TEM observations showed that AgSbTe 2 phase exists in the AIST film after heat treatment in addition to -Sb phase. No indium compounds were discovered in the AIST film by the energy dispersive spectroscopy (EDS) and XRD measurements.

show abstract

“…The resistance and I-V curves of the focused-short-pulse-laser-crystallized dots and non-crystallized area also were studied to confirm the structure of Ge 2 Sb 2 Te 5 phase-change films for the first time. Mytilineou and Ovshinsky [10] tried to realize electrical-optical hybrid cognitive behavior, but they could not achieve the course of focused pulse laser induced phase-change to form a conductive path. This paper dedicated to study structural change of laser-irradiated Ge 2 Sb 2 Te 5 films by electrical property measurement.…”

Section: Introductionmentioning

confidence: 99%