Structural change of laser-irradiated Ge2Sb2Te5 films studied by electrical property measurement

Effects of laser irradiation on optical properties of amorphous and annealed Ga15Se81In4 and Ga15Se79In6 chalcogenide thin films

“…The spectral dependence of extinction coefficient (k) for Ga 15 Se 79 In 6 : amorphous and annealed films; and laser irradiated thin films are shown in Figs. 5 and 6.…”

“…The calculated values of refractive indexes (n) and extinction coefficient (k) for Ga 15 Se 81 In 4 and Ga 15 Se 79 In 6 thin films (amorphous, annealed and laser irradiated films) are given in Tables 2 and 3.…”

“…As-prepared Annealed at 338 K The variation of (˛h) 1/2 with photon energy (h) for Ga 15 Se 79 In 6 thin films: amorphous and annealed films; laser irradiated films are shown in Figs. 9 and 10.…”

“…The value of indirect optical band gap (E g ) has been calculated by taking the intercept on the X-axis. The calculated values of E g for Ga 15 Se 81 In 4 and Ga 15 Se 79 In 6 thin films; amorphous, annealed and laser irradiated films are given in Table 4. Table 3 Extinction coefficient (k) in Ga15Se81In4 and Ga15Se79In6 films: as-prepared, annealed and laser irradiated thin films at 620 nm.…”

“…So many authors have studied [10][11][12][13][14] the effect of ␥-irradiation, annealing, photoinduced changes, gamma, UV, ion beam, deuteron, laser irradiation etc on optical properties of chalcogenide thin films. Huajun et al [15] have studied structural change of laser irradiated Ge-Sb-Te thin films. Bahishti et al [16] have studied the effect of laser irradiation on thermal and optical properties of Se-Te alloys.…”