Electrically Pumped III-N Microcavity Light Emitters Incorporating an Oxide Confinement Aperture

Lai, Yu-Wei; Chang, Tian-Sheuan; Li, Ya-Chen; Lu, Tien−Chang; Wang, Shing-Chung

doi:10.1186/s11671-016-1801-2

Cited by 9 publications

(2 citation statements)

References 21 publications

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“…The samples were subsequently directly bonded upside down onto a conductive Si substrate, after which LLO was employed to remove the sapphire substrate. 19,20) The residual u-GaN was removed and the n-GaN layer was thinned and polished to approximately 940 nm thickness using inductively coupled plasma-reactive ion etching and CMP to achieve a short cavity length with a smooth surface suitable for covering with a highly reflective mirror. The surface roughness of the exposed n-GaN layer was measured using atomic force microscopy over a 5 × 5 µm 2 scanned area and determined as smaller than 1 nm.…”

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confidence: 99%

High-temperature operation of GaN-based vertical-cavity surface-emitting lasers

Chang¹,

Kuo²,

Lian³

et al. 2017

Appl. Phys. Express

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We report GaN-based vertical-cavity surface-emitting lasers (VCSELs) capable of high-temperature operation. The GaN-based VCSELs include double dielectric distributed Bragg reflectors and epitaxially grown p–i–n InGaN multiple-quantum-well active layers initially deposited on c-plane sapphire substrates that are bonded to a silicon substrate with a p-side-down and patterned mirror configuration, allowing effective heat dissipation. GaN-based VCSELs with an emission aperture 10 µm in diameter were fabricated, and their temperature-dependent lasing characteristics revealed that the VCSELs can endure 350 K, as measured under quasicontinuous-wave operation conditions. The temperature-dependent lasing wavelength shift occurs at a rate of dλFP/dT ≈ 0.012 nm/K. The high-temperature operation of GaN-based VCSELs was attributed to the well-matched gain-mode offset, the p-side-down configuration, and the reduced lateral size of the bottom distributed Bragg reflector with recessed metal.

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confidence: 99%

High-temperature operation of GaN-based vertical-cavity surface-emitting lasers

Chang¹,

Kuo²,

Lian³

et al. 2017

Appl. Phys. Express

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“…Recently, the GaN-based materials have been applied to VCSELs and achieved important progress [5]. Universities and research institutes such as National Chiao-Tung University [6], Nichia Corporation [7], University of California, Santa Barbara [8], Sony Corporation [1], Xiamen University [9] and Meijo University [10] conducted good work on the designing and manufacturing of blue GaN-based VCSELs. In 2018, Stanley Electric Co., Ltd. demonstrated a GaN-based VCSEL with an output power of 7.6 mW by reducing both the internal loss and the reflectivity of the front cavity mirror [11].…”

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confidence: 99%

Improved Output Power of GaN-based VCSEL with Band-Engineered Electron Blocking Layer

Luo

2019

Micromachines

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The vertical-cavity surface-emitting laser (VCSEL) has unique advantages over the conventional edge-emitting laser and has recently attracted a lot of attention. However, the output power of GaN-based VCSEL is still low due to the large electron leakage caused by the built-in polarization at the heterointerface within the device. In this paper, in order to improve the output power, a new structure of p-type composition-graded AlxGa1−xN electron blocking layer (EBL) is proposed in the VCSEL, by replacing the last quantum barrier (LQB) and EBL in the conventional structure. The simulation results show that the proposed EBL in the VCSEL suppresses the leaking electrons remarkably and contributes to a 70.6% increase of the output power, compared with the conventional GaN-based VCSEL.

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Demonstration of polarization control GaN-based micro-cavity lasers using a rigid high-contrast grating reflector

Chang

Hong

Kuo

et al. 2019

Sci Rep

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We reported on GaN microcavity (MC) lasers combined with one rigid TiO2 high-contrast grating (HCG) structure as the output mirror. The HCG structure was directly fabricated on the GaN structure without an airgap. The entire MC structure comprised a bottom dielectric distributed Bragg reflector; a GaN cavity; and a top HCG reflector, which was designed to yield high reflectance for transverse magnetic (TM)- or transverse electric (TE)-polarized light. The MC device revealed an operation threshold of approximately 0.79 MW/cm2 when pulsed optical pumping was conducted using the HCG structure at room temperature. The laser emission was TM polarized with a degree of polarization of 99.2% and had a small divergence angle of 14° (full width at half maximum). This laser operation demonstration for the GaN-based MC structure employing an HCG exhibited the advantages of HCGs in semiconductor lasers at wavelengths from green to ultraviolet.

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Electrically Pumped III-N Microcavity Light Emitters Incorporating an Oxide Confinement Aperture

Cited by 9 publications

References 21 publications

High-temperature operation of GaN-based vertical-cavity surface-emitting lasers

High-temperature operation of GaN-based vertical-cavity surface-emitting lasers

Improved Output Power of GaN-based VCSEL with Band-Engineered Electron Blocking Layer

Demonstration of polarization control GaN-based micro-cavity lasers using a rigid high-contrast grating reflector

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