High-temperature operation of GaN-based vertical-cavity surface-emitting lasers

Chang, Tian-Sheuan; Kuo, Shiou Yi; Lian, Jhen Ting; Hong, Kuo Bin; Wang, Shing Chung; Lu, Tien‐Chang

doi:10.7567/apex.10.112101

Cited by 32 publications

(35 citation statements)

References 24 publications

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“…Figure 2b shows the structure having a 10.5-pair SiO 2 /Nb 2 O 5 DBR, 4.5λ cavity and 42-pair AlInN/GaN DBR, which was found to generate the highest output power. Because the DBR materials in this device, such as AlInN, have comparatively low thermal conductivities [29,30], while GaN (the primary cavity material) possesses significant thermal conductivity [31,32], R th is expected to be reduced as a result of implementing a long-cavity structure [33][34][35]. A previous theoretical study by Mei et al [35] assessed the effect of cavity length on R th in the case of a VCSEL based on GaN and having an AlInN/GaN DBR.…”

Section: High-power and Narrow Divergent Beam Performance Using A Lonmentioning

confidence: 99%

“…where Δλ/ΔPdiss is the wavelength shift over the power dissipation value and Δλ/ΔThs is the wavelength shift over the variation in the heat sink temperature [34][35][36][37]. Δλ/ΔThs values from 0.012 to 0.0185 nm/K have been previously reported for these types of devices [34,35,37,38]. Herein, thermal effects were negated by obtaining the Δλ/ΔThs data in conjunction with pulsed operation, and the 5λ-and 10λ-cavity devices were determined to have values of 0.0142 and 0.0146 nm/K, respectively, which are in agreement with previously reported data.…”

Section: High-power and Narrow Divergent Beam Performance Using A Lonmentioning

confidence: 99%

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High-Power GaN-Based Vertical-Cavity Surface-Emitting Lasers with AlInN/GaN Distributed Bragg Reflectors

et al. 2019

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High-efficiency and high-power operation have been demonstrated for blue GaN-based vertical-cavity surface-emitting lasers (VCSELs) with AlInN/GaN distributed Bragg reflectors. The high-efficiency performance was achieved by introducing a novel SiO2-buried lateral index guide and adjusting the front mirror reflectivity. Lateral optical confinement has been shown to greatly lower the otherwise significant loss of transverse radiation exhibited by typical VCSELs based on GaN. Employing a long (10λ) cavity can also enhance the output power, by lowering the thermal resistance of the VCSEL and increasing the operating current associated with thermal rollover. This modification, in conjunction with optimized front mirror reflectivity and a buried SiO2 lateral index guide, results in a blue VCSEL (in the continuous wave mode with an 8 μm aperture at 20 °C) having a superior differential quantum efficiency value of 31% and an enhanced 15.7 mW output power. This unit also exhibits a relatively high output power of 2.7 mW at temperatures as high as 110 °C. Finally, a 5.5 μm aperture VCSEL was found to generate a narrow divergence (5.1°) single-lobe far field pattern when operating at an output power of approximately 5 mW.

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Section: High-power and Narrow Divergent Beam Performance Using A Lonmentioning

confidence: 99%

Section: High-power and Narrow Divergent Beam Performance Using A Lonmentioning

confidence: 99%

High-Power GaN-Based Vertical-Cavity Surface-Emitting Lasers with AlInN/GaN Distributed Bragg Reflectors

et al. 2019

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“…Plots reprinted with permission. 64 Overlaid are the thermal resistance of reported CW-RT VCSEL by NCTU [88], Meijo-Stanley [71], and UCSB [89]. 115 xviii Tables Table 1.1 List of some dielectric materials used in DBRs [106].…”

Section: List Of Figuresmentioning

confidence: 99%

“…This allows metal contact pads to be located away from the aperture (preventing light blocking) and the carriers are transported into the MQWs through an underlying spreading layer. For the p-side, the intracavity contact is usually a transparent conductive oxide such as indium-tin oxide (ITO) [74,88] or a nitridebased tunnel junction (TJ) [81,89], whereas for the n-side they are the highly doped bulk…”

Section: Double Dielectric Structure With Dielectric Dbrsmentioning

confidence: 99%

Nonpolar GaN-based VCSELs with lattice-matched nanoporous distributed Bragg reflector mirrors

Mishkat-Ul-Masabih

Aragon

Monavarian

et al. 2020

Gallium Nitride Materials and Devices XV

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I am grateful to many people for making this work possible. First and foremost, I would like to thank my advisor Prof. Daniel Feezell for his dedicated guidance and support. Early on in my degree, I remember him mentioning that VCSEL projects are always of high risk and high reward. For the longest time, I doubted myself on whether I would be able to fulfill all the project requirements. But, Prof. Feezell believed in my ability and urged me to push forward which ultimately lead to groundbreaking results from my VCSEL project. Not only did I learn a ton from his vast knowledge on IIInitride materials and devices, his constructive criticisms greatly improved the quality of my work and allowed me to grow as a researcher. Next, I am thankful to my committee members and collaborators, Prof. Ganesh Balakrishnan, Prof. Sang Han, and Dr. Ting Luk for their time and suggestions. Their valuable insight on optical, electrical, and mechanical properties of semiconductors helped me tremendously in understanding the material characteristics and device performance of my VCSELs. I cannot express the immense gratitude I feel for my fellow group members, both past and present. All of whom have helped me towards the completion of my PhD in some way or another. Many thanks to Ashwin, Morteza, Mohsen, and Mike for introducing me to MOCVD and for taking care of my growths when I was busy doing something else. Discussions regarding fabrication with Andrew, Mahmoud, Rhett, Kenny, Farnood, and Abdel have always helped me in developing processes very v quickly and reliably. I am also grateful to Serdal, Arman, and Isaac for assisting me in various material and device related characterizations. Many of the accomplishments mentioned in this thesis could not have been possible without the support of the technical and/or administrative staff. As such, I am forever indebted to the ECE, CHTM, and CINT staff members for putting up with my numerous requests and questions throughout the years. Beyond the appreciation of the technical side of things, I would like to thank all my friends from back home and the ones I made during the course of my study. They were always there to lend a helping hand or to simply distract me from work whenever graduate student life became too overwhelming. Furthermore, I must also acknowledge the Bangladeshi community here at UNM for making Albuquerque feel like home, even though my real home is halfway around the world. Looking back, I will forever cherish these memories. Last, but certainly not least, I would like to thank my parents, my older sister, and my younger brother. I would not be where I am at today without their unconditional love and encouragement. They have sacrificed a lot so that I can pursue a career of my choice, even if it meant me being away from home for an extended period time. I only hope that the work I performed in this thesis is substantial enough to repay them and make them proud. vi

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“…Recently, the potential use of GaN as an optoelectronic device, especially in ultraviolet (UV) lasers applications, has been attracting increasingly more attention. According to the type of microcavity structure, laser devices can be classified into a few categories: random 1,2 , Fabry-Pérot (FP) [3][4][5] , and whispering-gallery mode (WGM) lasers [6][7][8] . The smooth surfaces of a WGM laser's microcavity allow for total internal reflection with minimal optical loss, thus producing a high quality factor (Q) and a lower laser threshold than other types of structures.…”

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confidence: 99%

Whispering-Gallery Mode Lasing in a Floating GaN Microdisk with a Vertical Slit

Zhu

Zhang

et al. 2020

Sci Rep

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Controlling the lasing mode, emission direction, threshold, and quality factor of whispering-gallery mode lasing is important for practical applications such as optical interconnections, on-chip communications, trace detection, high-density storage, etc. In order to simultaneously control the mode and emission direction and to achieve a high-quality factor in a low-threshold whisper-gallery mode laser, such as a GaN floating microdisk, a novel fabrication design of a microdisk with a vertical slit is proposed. To demonstrate proof of concept, we experimentally measure whispering-gallery mode lasing spectra of microdisks with and without a slit. Our findings suggest that the disks can indeed operate in whispering-gallery mode, and the slit is able to change the optical path in the microcavity without breaking lasing resonance. The slit in the microdisk can also influence the lasing mode, quality factor, and directional emission. Therefore, our study provides a feasible way to control whispering-gallery mode lasing properties.

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High-temperature operation of GaN-based vertical-cavity surface-emitting lasers

Cited by 32 publications

References 24 publications

High-Power GaN-Based Vertical-Cavity Surface-Emitting Lasers with AlInN/GaN Distributed Bragg Reflectors

High-Power GaN-Based Vertical-Cavity Surface-Emitting Lasers with AlInN/GaN Distributed Bragg Reflectors

Nonpolar GaN-based VCSELs with lattice-matched nanoporous distributed Bragg reflector mirrors

Whispering-Gallery Mode Lasing in a Floating GaN Microdisk with a Vertical Slit

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